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Fairchild Semiconductor |
30V P-Channel MOSFET • –8.8 A, –30 V RDS(ON) = 20 mΩ @ VGS = –10 V RDS(ON) = 35 mΩ @ VGS = –4.5 V • Low gate charge (17nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DD |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ! # " ! ! G S D2-PAK SSW Series G D S I2-PAK SSI Series G! ! |
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Fairchild Semiconductor |
Single N-Channel MOSFET 12.5 A, 30 V. RDS(ON) = 0.009 W @ VGS = 10 V RDS(ON) = 0.013 W @ VGS = 4.5 V Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. ' ' ' ' 62 6 |
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Fairchild Semiconductor |
30V Complementary PowerTrench MOSFET • Q1: N-Channel 6 A, 30 V RDS(on) = 28 mΩ @ VGS = 10V RDS(on) = 35 mΩ @ VGS = 4.5V • Q2: P-Channel –6 A, –30 V RDS(on) = 32 mΩ @ VGS = –10V RDS(on) = 45 mΩ @ VGS = –4.5V DD2 DD2 DD1 DD1 SO-8 Pin 1 SO-8 G2 S2 G G1 S1 S S S Q2 5 6 Q1 7 8 |
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Fairchild Semiconductor |
Dual N- and P-Channel FET These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and prov |
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Fairchild Semiconductor |
Single N-Channel MOSFET 10 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS = 10 V RDS(ON) = 0.020 Ω @ VGS = 4.5 V Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. ' ' ' ' 62 6 6 |
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Desde 2024. D4U Semiconductor.
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