| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
PNP Transistor PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002 KSH350 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -10 VCE = -10V IC = 10 IB hFE, DC CURRENT GAIN 100 -1 V BE(sat) 10 -0 |
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Fairchild Semiconductor |
PNP Transistor : KSH30 : KSH30C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Product VCE = - 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = - 5V, IC = 0 VCE = |
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Fairchild Semiconductor |
PNP Transistor : KSH30 : KSH30C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Product VCE = - 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = - 5V, IC = 0 VCE = |
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Fairchild Semiconductor |
PNP Transistor Current Collector Cut-off Current Emitter Cut-off Current *DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Product Test Condition IC = 30mA, IB = 0 VCE = 30V, IE = 0 VCB = 70V, IE = 0 VEB = 5V, |
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Fairchild Semiconductor |
NPN Transistor H31C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Product VCE = 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 1A VCE |
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Fairchild Semiconductor |
NPN Transistor H31C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Product VCE = 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 1A VCE |
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Fairchild Semiconductor |
PNP Transistor H32C ICES Collector Cut-off Current : KSH32 : KSH32C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Product VCE = - 40V, VBE = 0 VCE = - 1 |
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Fairchild Semiconductor |
PNP Transistor H32C ICES Collector Cut-off Current : KSH32 : KSH32C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Product VCE = - 40V, VBE = 0 VCE = - 1 |
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Fairchild Semiconductor |
NPN Transistor mA * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002 KSH340 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 10 VCE = 10V IC = 10 IB hFE, DC CURRENT GAIN 100 1 V |
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Fairchild Semiconductor |
Voltage Regulator |
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Fairchild Semiconductor |
NPN General Purpose Amplifier = 1.0MHz 500 0.32 15 40 0.5 0.95 V V MHz pF Min. 40 40 4.0 50 VV nA Max. Units V Off Characteristics V(BR)CEO Collector-Emitter Sustaining Voltage * V(BR)CBO V(BR)EBO ICBO hFE VCE(sat) VBE(on) fT Ccb Collector-Base Breakdown Voltage Emitter-Base Bre |
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Desde 2024. D4U Semiconductor.
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