logo

Fairchild Semiconductor RMW DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
RMWB04001

Fairchild Semiconductor
4 GHZ Buffer Amp

• 4 mil substrate
• Small-signal gain 27dB (typ.)
• Saturated Power Out 20dBm (typ.)
• Voltage Detector Included to Monitor Pout
• Chip size 2.4mm x 1.3mm x 100µm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Vol
Datasheet
2
RMWB11001

Fairchild Semiconductor
11 GHZ Buffer Amp





• 4 mil substrate Small-signal gain 21dB (typ.) Saturated Power Out 19dBm (typ.) Voltage Detector Included to Monitor Pout Chip size 2.0mm x 1.3mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4
Datasheet
3
RMWB12001

Fairchild Semiconductor
12 GHZ Buffer Amp





• 4 mil Substrate Small-signal Gain 25dB (typ.) 3dB compressed Pout 21dBm (typ.) Voltage Detector Included to Monitor Pout Chip size 2.2mm x 1.7mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4
Datasheet
4
RMWB24001

Fairchild Semiconductor
24 GHZ Buffer Amp





• 4 mil Substrate Small-signal Gain 25dB (typ.) Saturated Power Out 17dBm (typ.) Voltage Detector Included to Monitor Pout Chip size 2.5mm x 1.5mm x 100µm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Vol
Datasheet
5
RMWB33001

Fairchild Semiconductor
33 GHZ Buffer Amp





• 4 mil Substrate Small-signal Gain 24dB (typ.) Saturated Power Out 19dBm (typ.) Voltage Detector Included to Monitor Pout Chip size 3.2mm x 1.2mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4
Datasheet
6
RMWD24001

Fairchild Semiconductor
21 - 26.5 GHZ Driver Amplifier Mmic

• 4 mil substrate
• Small-signal gain 23dB (typ.)
• 1dB compressed Pout 17dBm (typ.)
• Voltage detector included to monitor Pout
• Chip size 2.85mm x 1.2mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC Tstg RJC Parameter Positive DC Voltage (+
Datasheet
7
RMWD38001

Fairchild Semiconductor
38 GHZ Driver Amp

• 4 mil substrate
• Small-signal gain 25dB (typ.)
• 1dB compressed Pout 18dBm (typ.)
• Voltage detector included to monitor Pout
• Chip size 3.0mm x 1.2mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4
Datasheet
8
RMWL26001

Fairchild Semiconductor
23/26 GHZ Lna

• 4 mil substrate
• Small-signal gain 21dB (typ.)
• 2.9dB noise figure (typ.)
• Chip size 3.0mm x 1.25mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC Tstg Rjc Parameter Positive DC voltage (+4V Typical) Negative DC voltage Simultaneous (Vd
  –Vg
Datasheet
9
RMWL38001

Fairchild Semiconductor
38 GHZ Lna

• 4 mil substrate
• Noise figure 2.7dB (typ.)
• Small-signal gain 22dB (typ.)
• 1 dB compressed Pout 13.5dBm (typ.)
• Chip size 2.9mm x 1.25mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC Tstg RJC Parameter Positive DC voltage (+4V Typical) N
Datasheet
10
RMWM26001

Fairchild Semiconductor
26 GHZ Mixer

• 4 mil substrate
• Conversion loss 7.5dB (Upconverter)
• Conversion loss 8.5dB (Downconverter)
• No DC bias required
• Chip size 1.95mm x 1.5mm Device Absolute Ratings Symbol PIN TC Tstg Parameter RF Input Power (from 50Ω source) Operating Basepla
Datasheet
11
RMWM38001

Fairchild Semiconductor
38 GHZ Mixer

• 4mil substrate
• Conversion loss 5dB (Upconverter)
• Conversion loss 8dB (Downconverter)
• No DC bias required
• Chip size 1.4mm x 1.4mm Device Absolute Ratings Symbol PIN TC Tstg Parameter RF Input Power (from 50Ω source) Operating Baseplate Tem
Datasheet
12
RMWP23001

Fairchild Semiconductor
23 GHZ Power Amp

• 4mil substrate
• Small-signal gain 22.5dB (typ.)
• 1dB compressed Pout 23.5dBm (typ.)
• Chip size 2.6mm x 1.2mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4V Typical) Negative DC Voltage Simultaneo
Datasheet
13
RMWP26001

Fairchild Semiconductor
26 GHZ Power Amp

• 4mil substrate
• Small-signal gain 23dB (typ.)
• 1dB compressed Pout 24dBm (typ.)
• Chip size 2.85mm x 1.2mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4V Typical) Negative DC Voltage Simultaneous
Datasheet
14
RMWP38001

Fairchild Semiconductor
38 GHZ Power Amp

• 4mil substrate
• Small-signal gain 22dB (typ.)
• 1dB compressed Pout 22dBm (typ.)
• Chip size 3.4mm x 1.4mm Device Absolute Ratings Symbol Vd Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4V Typical) Simultaneous (Vd
  –Vg) Positive DC Curr
Datasheet
15
RMWT04001

Fairchild Semiconductor
4/12 GHZ Tripler

• 4 mil substrate
• Conversion loss 14dB (typ.)
• No DC bias required
• Chip size 1.8mm x 1.05mm Device Absolute Ratings Symbol PIN TC Tstg Parameter RF Input Power (from 50Ω source) Operating Baseplate Temperature Storage Temperature Range Ratings
Datasheet
16
RMWT11001

Fairchild Semiconductor
11/33 GHZ Tripler

• 4 mil substrate
• Conversion loss 14.5dB (typ.)
• No DC bias required
• Chip size 1.6mm x 1.05mm Device Absolute Ratings Symbol PIN TC Tstg Parameter RF Input Power (from 50Ω source) Operating Baseplate Temperature Storage Temperature Range Ratin
Datasheet
17
RMWW12001

Fairchild Semiconductor
12/24 GHZ Doubler

• 4 mil substrate
• Conversion loss 10 dB (typ.)
• No DC bias required
• Chip size 1.5mm x 2.5mm Device Absolute Ratings Symbol PIN TC TSTG Parameter RF Input Power (from 50Ω source) Operating Baseplate Temperature Storage Temperature Range Ratings
Datasheet



logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad