Fairchild Semiconductor P55 Hoja de datos

No.	parte #	Fabricante	Descripción
1	FDP55N06	Fairchild Semiconductor	N-Channel MOSFET • • • • • • 55A, 60V, RDS(on) = 0.022 Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transis
2	BCP55	Fairchild Semiconductor	NPN General Purpose Amplifier rate above 25° C Thermal Resistance, Junction to Ambient Max BCP55 1.5 12 83.3 Units W mW/°C °C/W © 1997 Fairchild Semiconductor Corporation BCP55 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C
3	P55N06	Fairchild Semiconductor	FDP55N06 • RDS(on) = 22 mΩ @VGS = 10 V, ID = 27.5 A • Low Gate Charge ( Typ. 30 nC) • Low Crss ( Typ. 60 pF) • 100% Avalanche Tested N-Channel UniFETTM MOSFET Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar
4	FQP55N06	Fairchild Semiconductor	60V N-Channel MOSFET • • • • • • • 55A, 60V, RDS(on) = 0.020Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " " TO-220
5	FQP55N10	Fairchild Semiconductor	100V N-Channel MOSFET • 55 A, 100 V, RDS(on) = 26 mΩ (Max.) @ VGS = 10 V, ID = 27.5 A • Low Gate Charge (Typ. 75 nC) • Low Crss (Typ. 130 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D GDS TO-220 Absolute Maximum Ratings TC = 25°C unless othe
6	FDP5500_F085	Fairchild Semiconductor	N-Channel UltraFET Power MOSFET Typ rDS(on) = 5.1mΩ at VGS = 10V, ID = 80A Typ Qg(10) = 114nC at VGS = 10V Simulation Models -Temperature Compensated PSPICE and SABERTM Models Peak Current vs Pulse Width Curve UIS Rating Curve Qualified to AEC Q101 RoHS Compliant App
7	FJP5555	Fairchild Semiconductor	NPN Silicon Transistor • Fast Speed Switching • Wide Safe Operating Area • High Voltage Capability Application • Electronic Ballast • Switch Mode Power Supplies 1 TO-220 1.Base 2.Collector 3.Emitter 1 B C2 E3 Ordering Information Part Number FJP5555TU Marking J5555
8	KSP55	Fairchild Semiconductor	Amplifier Transistor =0 VCB= -80V, IE=0 VCE= -60V, IB=0 VCE= -1V, IC= -10mA VCE= -1V, IC= -100mA IC= -100mA, IB= -10mA VCE= -1V, IC= -100mA VCE= -2V, IC= -10mA f=100MHz 50 50 50 -0.25 -1.2 V V MHz -0.1 -0.1 -0.1 µA µA µA Test Condition IC= -1mA, IB=0 IE= -100µA, IC=0 Min