| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
200V N-Channel MOSFET • • • • • • 18A, 200V, RDS(on) = 0.14Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S |
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Fairchild Semiconductor |
500V N-Channel MOSFET • • • • • • 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 9 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply Description UniFETTM MOSFET is Fairchild Semicond |
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Fairchild Semiconductor |
N-Channel UniFET MOSFET • 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V • Low gate charge ( typical 45 nC) • Low Crss ( typical 25 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect |
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Fairchild Semiconductor |
N-Channel UniFETTM FRFET MOSFET • RDS(on) = 120 mΩ (Typ.) @ VGS = 10 V, ID = 9 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 24 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD/LED TV • Consumer Appliances • Lighting • Uninterruptible Power Supply • AC-DC Power S |
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Fairchild Semiconductor |
18-Bit LVTTL/GTLP Universal Bus Transceiver s Bidirectional interface between GTLP and LVTTL logic levels s Edge Rate Control to minimize noise on the GTLP port s Power up/down high impedance for live insertion s External VREF pin for receiver threshold s BiCMOS technology for low power dissip |
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Fairchild Semiconductor |
Sustain • Use of high speed 300V IGBTs with parallel FRDs • Single-grounded power supply by means of built-in HVIC • Sufficient current driving capability for IGBTs due to adding a buffer • Isolation rating of 1500Vrms/min. • Low leakge current due to using |
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Desde 2024. D4U Semiconductor.
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