| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
NPN Silicon Transistor C = 2A, IB = 0.5A IC = 4A, IB = 1A IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 2A IB1 = - IB2 = 0.4A RL = 62.5Ω 4 0.8 4 0.9 65 10 8 Min. 300 400 1 60 40 0.5 0.6 1 1.2 1.6 V V V V V pF MHz µs µs µs |
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Fairchild Semiconductor |
NPN Silicon Transistor , f = 0.1MHz VCE = 10V, IC = 0.5A VCC =125V, IC = 5A IB1 = - IB2 = 1A RL = 50Ω 4 1.6 3 0.7 110 8 5 Min. 400 Typ. Max. 1 60 30 1 2 3 1.2 1.6 V V V V V pF MHz µs µs µs Units V mA VBE(sat) Cob fT tON tSTG tF Base-Emitter Saturation Voltage Output Cap |
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Fairchild Semiconductor |
NPN Silicon Transistor C = 2A, IB = 0.5A IC = 4A, IB = 1A IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 2A IB1 = - IB2 = 0.4A RL = 62.5Ω 4 0.8 4 0.9 65 10 8 Min. 300 400 1 60 40 0.5 0.6 1 1.2 1.6 V V V V V pF MHz µs µs µs |
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Fairchild Semiconductor |
NPN Silicon Transisor |
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Fairchild Semiconductor |
NPN Silicon Transisor |
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Desde 2024. D4U Semiconductor.
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