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Fairchild Semiconductor |
PNP Multi-Chip General Purpose Amplifier Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max FMB200 700 5.6 180 Units mW mW/°C °C/W © 1998 Fairchild Semiconductor Corporation FMB200 PNP Multi-Chip General Purpose Amplifier (continued) Electrical Character |
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Fairchild Semiconductor |
NPN Amplifier 2222A — NPN Multi-Chip General-Purpose Amplifier Ordering Information Part Number FFB2222A FMB2222A MMPQ2222A Top Mark .1P .1P MMPQ2222A Package SC70 6L SSOT 6L SOIC 16L Packing Method Tape and Reel Tape and Reel Tape and Reel Absolute Maximum R |
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Fairchild Semiconductor |
PNP Multi-Chip General Purpose Amplifier e consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Ef |
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Fairchild Semiconductor |
MOSFET Max rS1S2(on) = 36 mΩ at VGS = -4.5 V, ID = -5.7 A Max rS1S2(on) = 50 mΩ at VGS = -2.5 V, ID = -4.6 A Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm HBM ESD protection level 2.8 kV (Note 3) RoHS Compliant General Descrip |
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Fairchild Semiconductor |
0.5A Bridge Rectifiers • Low-Leakage • Surge Overload Rating: 35 A peak • Ideal for Printed Circuit Board • UL Certified: UL #E258596 SOIC-4 Polarity symbols molded or mark on body 43 ~~ ++ ~+ ~- 12 Ordering Informations Part Number MB1S MB2S MB4S MB6S MB8S Marking MB1 |
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Fairchild Semiconductor |
NPN & PNP Complementary Dual Transistor unless otherwise noted Test Conditions Ic = 10 mA Ic = 10 uA Ie = 10 uA Min 30 60 5 Max Units V V V © 1998 Fairchild Semiconductor Corporation Page 1 of 2 2227A.lwpPr19&63(Y1) FMB2227A NPN & PNP Complementary Dual Transistor (continued) El |
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Fairchild Semiconductor |
Dual Common Drain N-Channel MOSFET Max rS1S2(on) = 16.5 mΩ at VGS = 4.5 V, ID = 8 A Max rS1S2(on) = 18 mΩ at VGS = 4.2 V, ID = 7.4 A Max rS1S2(on) = 21 mΩ at VGS = 3.1 V, ID = 7 A Max rS1S2(on) = 24 mΩ at VGS = 2.5 V, ID = 6.7 A Low Profile - 0.8 mm maximum - in the new pack |
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Desde 2024. D4U Semiconductor.
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