Fairchild Semiconductor KSH Hoja de datos

No.	parte #	Fabricante	Descripción
1	KSH200	Fairchild Semiconductor	NPN Transistor est Condition IC=100mA, IB=0 VCB=40V, IE=0 VEBO=8V, IC=0 VCE=1V, IC=500mA VCE=1V, IC=2A VCE=2V, IC=5A IC=500mA, IB=50mA IC=2A, IB=200mA IC=5A, IB=1A IC=5A, IB=2A VCE=1V, IC=2A VCE=10V, IC=100mA VCB=10V, IE=0, f=0.1MHz 65 80 70 45 10 180 0.3 0.75 1.8
2	KSH41C	Fairchild Semiconductor	NPN Transistor DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Product Test Condition IC = 30mA, IB = 0 VCE = 60V, IB = 0 VCE = 100V, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 0.3A VCE = 4V, IC = 3A IC = 6A, IB
3	KSH44H11I	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor • Lead Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular KSE44H • Fast Switching Speeds • Low Collector-Emitter Saturation Voltage Description Designed for general-purpose power
4	KSH117	Fairchild Semiconductor	PNP Transistor Cut-off Current Emitter Cut-off Current *DC Current Gain Test Condition IC = - 30mA, IB = 0 VCE = - 50V, IB = 0 VCB = - 100V, IE = 0 VEB = - 5V, IC = 0 VCE = - 3V, VEB = - 0.5A VCE = - 3V, VEB = - 2A VCE = - 3V, IC = - 4A IC = -2A, IB = - 8mA IC = -
5	KSH29	Fairchild Semiconductor	NPN Transistor H29C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product VCE = 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 0.2A VCE = 4V
6	KSH350	Fairchild Semiconductor	PNP Transistor PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002 KSH350 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -10 VCE = -10V IC = 10 IB hFE, DC CURRENT GAIN 100 -1 V BE(sat) 10 -0
7	KSH13003	Fairchild Semiconductor	High Voltage Power Transistor D-PACK C = 5mA, IB = 0 VEB = 9V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A IC = 1.5A, IB = 0.5A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.1A VCC = 125V, IC = 1A IB1 = 0.2A, I
8	KSH122I	Fairchild Semiconductor	NPN Transistor Description • D-PAK for Surface Mount Applications • High DC Current Gain Designed for general-purpose power and switching, such as output or driver stages in applications. • Built-in Damper Diode at E-C • Lead Formed for Surface Mount Applicati
9	KSH112	Fairchild Semiconductor	NPN Transistor rent Emitter Cut-off Current * DC Current Gain Test Condition IC = 30mA, IB = 0 VCE = 50V, IB = 0 VCB = 100V, IB = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 0.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A IC = 2A, IB = 8mA IC = 4A, IB = 40mA IC = 4A, IB = 40mA VCE
10	KSH122	Fairchild Semiconductor	NPN Transistor Description • D-PAK for Surface Mount Applications • High DC Current Gain Designed for general-purpose power and switching, such as output or driver stages in applications. • Built-in Damper Diode at E-C • Lead Formed for Surface Mount Applicati
11	KSH30C	Fairchild Semiconductor	PNP Transistor : KSH30 : KSH30C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Product VCE = - 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = - 5V, IC = 0 VCE =
12	KSH127	Fairchild Semiconductor	PNP Transistor ustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Test Condition IC = - 30
13	KSH210	Fairchild Semiconductor	PNP Transistor BO = - 8V, IC = 0 VCE = - 1V, IC = - 500mA VCE = - 1V, IC = - 2A VCE = - 2V, IC = - 5A IC = - 500mA, IB= - 50mA IC = - 2A, IB = - 200mA IC = - 5A, IB = - 1A IC = - 5A, IB = - 1A VCE = - 1V, IC = - 2A VCE = - 10V, IC = - 100mA VCB = - 10V, IE = 0, f =
14	KSH30	Fairchild Semiconductor	PNP Transistor : KSH30 : KSH30C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Product VCE = - 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = - 5V, IC = 0 VCE =
15	KSH3055	Fairchild Semiconductor	PNP Transistor Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Product Test Condition IC = 30mA, IB = 0 VCE = 30V, IE = 0 VCB = 70V, IE = 0 VEB = 5V,
16	KSH31	Fairchild Semiconductor	NPN Transistor H31C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Product VCE = 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 1A VCE
17	KSH31C	Fairchild Semiconductor	NPN Transistor H31C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Product VCE = 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 1A VCE
18	KSH32	Fairchild Semiconductor	PNP Transistor H32C ICES Collector Cut-off Current : KSH32 : KSH32C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Product VCE = - 40V, VBE = 0 VCE = - 1
19	KSH2955	Fairchild Semiconductor	PNP Transistor Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Product Test Condition IC = - 30mA, IB = 0 VCE = - 30V, IE = 0 VCB = - 70V, I
20	KSH29C	Fairchild Semiconductor	NPN Transistor H29C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product VCE = 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 0.2A VCE = 4V