| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
High Voltage Fast-Switching NPN Power Transistor • High Voltage High Speed Power Switch Application • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 TO-220 1.Base 2.Collector 3.Emitter Ordering Information Part Number FJP13007TU |
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Fairchild Semiconductor |
FJP13009 • High-Voltage Capability • High Switching Speed Applications • Electronic Ballast • Switching Regulator • Motor Control • Switched Mode Power Supply Description The FJP13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJP13009 is |
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Fairchild Semiconductor |
High Voltage Fast-Switching NPN Power Transistor • High Voltage High Speed Power Switch Application • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 TO-220 1.Base 2.Collector 3.Emitter Ordering Information Part Number FJP13007TU |
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Fairchild Semiconductor |
600 Watt Transient Voltage Suppressors • Glass-Passivated Junction • 600 W Peak Pulse Power Capability on 10/1000 μs Waveform. • Excellent Clamping Capability • Low-Incremental Surge Resistance • Fast Response Time: Typically Less than 1.0 ps from 0 V to BV minimum for Unidirectional and |
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Fairchild Semiconductor |
High Voltage Fast-Switching NPN Power Transistor • High Voltage High Speed Power Switch Application • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 TO-220 1.Base 2.Collector 3.Emitter Ordering Information Part Number FJP13007TU |
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Fairchild Semiconductor |
600 Watt Transient Voltage Suppressors • Glass-Passivated Junction • 600 W Peak Pulse Power Capability on 10/1000 μs Waveform. • Excellent Clamping Capability • Low-Incremental Surge Resistance • Fast Response Time: Typically Less than 1.0 ps from 0 V to BV minimum for Unidirectional and |
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Fairchild Semiconductor |
1500 Watt Transient Voltage Suppressors • Glass-Passivated Junction • 1500 W Peak Pulse Power Capability on 10/1000 μs Waveform. • Excellent Clamping Capability • Low-Incremental Surge Resistance • Fast Response Time: Typically Less than 1.0 ps from 0 V to BV Minimum for Unidirectional and |
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Fairchild Semiconductor |
1500 Watt Transient Voltage Suppressors • Glass-Passivated Junction • 1500 W Peak Pulse Power Capability on 10/1000 μs Waveform. • Excellent Clamping Capability • Low-Incremental Surge Resistance • Fast Response Time: Typically Less than 1.0 ps from 0 V to BV Minimum for Unidirectional and |
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Fairchild Semiconductor |
1500 Watt Transient Voltage Suppressors • Glass-Passivated Junction • 1500 W Peak Pulse Power Capability on 10/1000 μs Waveform. • Excellent Clamping Capability • Low-Incremental Surge Resistance • Fast Response Time: Typically Less than 1.0 ps from 0 V to BV Minimum for Unidirectional and |
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Fairchild Semiconductor |
1500 Watt Transient Voltage Suppressors • Glass-Passivated Junction • 1500 W Peak Pulse Power Capability on 10/1000 μs Waveform. • Excellent Clamping Capability • Low-Incremental Surge Resistance • Fast Response Time: Typically Less than 1.0 ps from 0 V to BV Minimum for Unidirectional and |
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Fairchild Semiconductor |
600 Watt Transient Voltage Suppressors • Glass-Passivated Junction • 600 W Peak Pulse Power Capability on 10/1000 μs Waveform. • Excellent Clamping Capability • Low-Incremental Surge Resistance • Fast Response Time: Typically Less than 1.0 ps from 0 V to BV minimum for Unidirectional and |
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Fairchild Semiconductor |
600 Watt Transient Voltage Suppressors • Glass-Passivated Junction • 600 W Peak Pulse Power Capability on 10/1000 μs Waveform. • Excellent Clamping Capability • Low-Incremental Surge Resistance • Fast Response Time: Typically Less than 1.0 ps from 0 V to BV minimum for Unidirectional and |
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Desde 2024. D4U Semiconductor.
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