| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
N-Channel Switch GSS IGSS VGS(off) Gate-Source Breakdwon Voltage Gate Reverse Current Gate-Source Cutoff Voltage IG = -10µA, VDS = 0 VGS = -15V, VDS = 0 VGS = -15V, VDS = 0, TA = 100°C VDS = 15V, ID = 10nA 108 109 110 On Characteristics IDSS Zero-Gate Voltag |
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Fairchild Semiconductor |
N-Channel Switch • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51 • Source & Drain are interchangeable. G SD TO-92 Figure 1. J111 / J112 / J113 Device Package Ordering |
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Fairchild Semiconductor |
N-Channel Switch • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51 • Source & Drain are interchangeable. G SD TO-92 Figure 1. J111 / J112 / J113 Device Package Ordering |
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Fairchild Semiconductor |
N-Channel Switch • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51 • Source & Drain are interchangeable. G SD TO-92 Figure 1. J111 / J112 / J113 Device Package Ordering |
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Fairchild Semiconductor |
600 Watt Transient Voltage Suppressors • Glass-Passivated Junction • 600 W Peak Pulse Power Capability on 10/1000 μs Waveform. • Excellent Clamping Capability • Low-Incremental Surge Resistance • Fast Response Time: Typically Less than 1.0 ps from 0 V to BV minimum for Unidirectional and |
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Fairchild Semiconductor |
600 Watt Transient Voltage Suppressors • Glass-Passivated Junction • 600 W Peak Pulse Power Capability on 10/1000 μs Waveform. • Excellent Clamping Capability • Low-Incremental Surge Resistance • Fast Response Time: Typically Less than 1.0 ps from 0 V to BV minimum for Unidirectional and |
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Fairchild Semiconductor |
600 Watt Transient Voltage Suppressors • Glass-Passivated Junction • 600 W Peak Pulse Power Capability on 10/1000 μs Waveform. • Excellent Clamping Capability • Low-Incremental Surge Resistance • Fast Response Time: Typically Less than 1.0 ps from 0 V to BV minimum for Unidirectional and |
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Fairchild Semiconductor |
600 Watt Transient Voltage Suppressors • Glass-Passivated Junction • 600 W Peak Pulse Power Capability on 10/1000 μs Waveform. • Excellent Clamping Capability • Low-Incremental Surge Resistance • Fast Response Time: Typically Less than 1.0 ps from 0 V to BV minimum for Unidirectional and |
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Fairchild Semiconductor |
1500 Watt Transient Voltage Suppressors • Glass-Passivated Junction • 1500 W Peak Pulse Power Capability on 10/1000 μs Waveform. • Excellent Clamping Capability • Low-Incremental Surge Resistance • Fast Response Time: Typically Less than 1.0 ps from 0 V to BV Minimum for Unidirectional and |
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Fairchild Semiconductor |
1500 Watt Transient Voltage Suppressors • Glass-Passivated Junction • 1500 W Peak Pulse Power Capability on 10/1000 μs Waveform. • Excellent Clamping Capability • Low-Incremental Surge Resistance • Fast Response Time: Typically Less than 1.0 ps from 0 V to BV Minimum for Unidirectional and |
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Fairchild Semiconductor |
1500 Watt Transient Voltage Suppressors • Glass-Passivated Junction • 1500 W Peak Pulse Power Capability on 10/1000 μs Waveform. • Excellent Clamping Capability • Low-Incremental Surge Resistance • Fast Response Time: Typically Less than 1.0 ps from 0 V to BV Minimum for Unidirectional and |
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Fairchild Semiconductor |
1500 Watt Transient Voltage Suppressors • Glass-Passivated Junction • 1500 W Peak Pulse Power Capability on 10/1000 μs Waveform. • Excellent Clamping Capability • Low-Incremental Surge Resistance • Fast Response Time: Typically Less than 1.0 ps from 0 V to BV Minimum for Unidirectional and |
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Desde 2024. D4U Semiconductor.
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