Fairchild Semiconductor G40 Hoja de datos

No.	parte #	Fabricante	Descripción
1	G40N60	Fairchild Semiconductor	Ultrafast IGBT • High speed switching • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 20A • High input impedance • CO-PAK, IGBT with FRD : trr = 42ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C GC E
2	G40N60UFD	Fairchild Semiconductor	FGA40N60UFD • • • • High speed switching Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A High input impedance CO-PAK, IGBT with FRD : trr = 50ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G TO-
3	HGTG40N60B3	Fairchild Semiconductor	N-Channel IGBT of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is idea
4	G40N60A4	Fairchild Semiconductor	HGTG40N60A4 of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is
5	G40N60C3	Fairchild Semiconductor	HGTG40N60C3 of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT i
6	HGTG40N60A4	Fairchild Semiconductor	N-Channel IGBT of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is
7	FMG1G400US60H	Fairchild Semiconductor	IGBT • Short Circuit Rated Time; 10us @ TC =100°C, VGE = 15V • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 400A • High Input Impedance • Fast & Soft Anti-Parallel FWD • UL Certified No.E209204 Application • AC & DC Motor Contro
8	RFG40N10	Fairchild Semiconductor	40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs • 40A, 100V • rDS(ON) = 0.040Ω • UIS Rating Curve • SOA is Power Dissipation Limited • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMB
9	HGTG40N60C3	Fairchild Semiconductor	UFS Series N-Channel IGBT of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT i
10	FMG1G400US60L	Fairchild Semiconductor	IGBT • Short Circuit Rated Time; 10us @ TC =100°C, VGE = 15V • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 400A • High Input Impedance • Fast & Soft Anti-Parallel FWD • UL Certified No.E209204 Application • AC & DC Motor Contro
11	FM2G400US60	Fairchild Semiconductor	Molding Type Module • • • • • • UL Certified No.E209204 Short Circuit rated 10us @ TC = 100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 400A High Input Impedance Fast & Soft Anti-Parallel FWD Package Code : 7PM-EA E1/C2 Applicat
12	FMG2G400US60	Fairchild Semiconductor	Molding Type Module • • • • • • Short Circuit Rated Time; 10us @ TC =100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 400A High Input Impedance Fast & Soft Anti-Parallel FWD UL Certified No.E209204 Package Code : 7PM-IA Applicatio