Fairchild Semiconductor G18 Hoja de datos

No.	parte #	Fabricante	Descripción
1	HGTG18N120BN	Fairchild Semiconductor	N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies wh
2	G18N120BN	Fairchild Semiconductor	HGTG18N120BN of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies wh
3	HGTG18N120BND	Fairchild Semiconductor	N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies whe
4	18N120BN	Fairchild Semiconductor	HGTG18N120BN of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies wh