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Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor -Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=6A IC=6A, IB=1.5A IC=6A, IB=1.5A VCC=200V, IC=6A, RL=33Ω IB1=1.2A, IB2= - 2.4A 6 10 5 8 3 1.5 3 0. |
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Fairchild Semiconductor |
Programmable USB Type-C Controller Type-C Detection of Attach and Orientation Flexible Multi-Platform Support through I2C Programmability Supports: - Dual Role Port (DRP) - Downstream Facing Port (DFP) - Upstream Facing Port (UFP) - Accessory Modes - Alternate Interfaces Applica |
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Fairchild Semiconductor |
Programmable USB Type-C Controller Dual-Role Functionality with Autonomous DRP Toggle Ability to connect as either a host or a device based on what has been attached. Software configurable either as a dedicated host, dedicated device, or dual role. - Dedicated devices can operat |
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Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Turn On Voltage Storage Time Fall Time Test Conditions VCB=1500V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=300mA, IC=0 VCE=5V, IC=1A VCE=5V, IC=6A IC=6A, IB=1.5A IC=6A, IB= |
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Fairchild Semiconductor |
Diffused T-100 Solid State Lamps ent in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com © 2000 Fairchild |
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Fairchild Semiconductor |
(MV6x00A) SUBMINIATURE T-3/4 LED DIFFUSED and CLEAR LAMPS • Subminiature T-3/4 transfer molded • Low package profile • Axial leads • Wide viewing angle .091 (2.3) .083 (2.1) • SMT versions DIA .010 (.26) .002 (.06) .075 (1.9) .063 (1.6) .020 (.5) .012 (.3) .058 (1.48) .050 (1.28) .056 (1.44) .048 (1.24) |
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Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Turn On Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=300mA, IC=0 VCE=5V, IC=1A VCE=5V, IC=5A IC=5A, IB=1.2A IC=5A |
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Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor oltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IC=500µA, IE=0 IC=5mA, IB=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=10A IC |
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Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor Base Breakdown Voltage hFE1 hFE2 DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage tSTG* Storage Time tF* Fall Time * Pulse Test: PW=20µs, duty Cycle=1% Pulsed VCB=1400V, RBE=0 VCB=800V |
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Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor • High Voltage Power Switch Switching Application • Wide Safe Operating Area • Built-in Free-Wheeling Diode • Suitable for Electronic Ballast Application • Small Variance in Storage Time • Two Package Choices : D-PAK or TO-220 Equivalent Circuit C B |
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Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor cteristics Junction to Case Junction to Ambient Maximun Lead Temperature for Soldering Purpose : 1/8” from Case for 5 seconds Rating 1.65 62.5 270 °C Unit °C/W ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5504D/KSC5504DT Electr |
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Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor V Min. 700 5 1 10 Typ. Max. Units V V mA mA * Pulse Test: PW = 300µs, duty cycle = 1.5% Pulsed ©2002 Fairchild Semiconductor Corporation Rev. B, December 2002 BU508AF Typical Characteristics 100 10000 VBE(sat)[mV], SATURATION VOLTAGE VCE = |
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Fairchild Semiconductor |
(MV6x00A) SUBMINIATURE T-3/4 LED DIFFUSED and CLEAR LAMPS • Subminiature T-3/4 transfer molded • Low package profile • Axial leads • Wide viewing angle .091 (2.3) .083 (2.1) • SMT versions DIA .010 (.26) .002 (.06) .075 (1.9) .063 (1.6) .020 (.5) .012 (.3) .058 (1.48) .050 (1.28) .056 (1.44) .048 (1.24) |
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Fairchild Semiconductor |
USB2.0 High-Speed OTG Transceiver Complies with USB 2.0, OTG Rev 1.3 Supplement, and ULPI Rev 1.1 Specifications Supports 480 Mbps, 12 Mbps, and 1.5 Mbps USB2.0 Speeds - Integrated Termination Resistors Meet USB2.0 Resistor ECN - Integrated Serializer and Deserializer - Insertion |
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Fairchild Semiconductor |
SUBMINIATURE T-3/4 LED DIFFUSED and CLEAR LAMPS • Subminiature T-3/4 transfer molded • Low package profile • Axial leads • Wide viewing angle .091 (2.3) .083 (2.1) • SMT versions .075 (1.9) DIA .063 (1.6) .010 (.26) .002 (.06) .020 (.5) .012 (.3) DESCRIPTION These T-3/4 subminiature LED lamps |
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Fairchild Semiconductor |
SUBMINIATURE T-3/4 LED DIFFUSED and CLEAR LAMPS • Subminiature T-3/4 transfer molded • Low package profile • Axial leads • Wide viewing angle .091 (2.3) .083 (2.1) • SMT versions .075 (1.9) DIA .063 (1.6) .010 (.26) .002 (.06) .020 (.5) .012 (.3) DESCRIPTION These T-3/4 subminiature LED lamps |
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Fairchild Semiconductor |
SUBMINIATURE T-3/4 LED DIFFUSED and CLEAR LAMPS • Subminiature T-3/4 transfer molded • Low package profile • Axial leads • Wide viewing angle .091 (2.3) .083 (2.1) • SMT versions .075 (1.9) DIA .063 (1.6) .010 (.26) .002 (.06) .020 (.5) .012 (.3) DESCRIPTION These T-3/4 subminiature LED lamps |
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Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor ollector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Turn On Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=300mA, IC=0 VCE=5V, IC=1A VCE=5V, IC=4A IC=4A, IB=1A IC=4A, IB=1A |
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Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor oltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=6A IC=6A, IB=1.5A IC=6A, IB=1.5A VCC=200V, IC=6A, RL=33Ω IB1=1.2A, IB2= - 2.4A 6 10 5 8 3 1.5 3 0.2 V V µs µs Min Typ M |
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Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor age Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=8A IC=8A, IB=2A IC=8A, IB=2A VCC=200V, IC=7A, RL=30Ω IB1= 1.4A, IB2= - 2.8A 6 10 5 40 8 3 1.5 3 0.2 V V µs µs Min Typ Max |
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Desde 2024. D4U Semiconductor.
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