No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
Power Switch ge and Currents Reverse Voltage 3.0 V Average Forward dc 'f Current/Segment or Decimal Point 25 mA Derate from 25° С Ambient Temperature 0.3mA/°C Peak Forward Current •pk Segment or Decimal Point (100 ms pulse width) 1000 pps, TA • 25°C 200 mA Vr FN |
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Fairchild Semiconductor |
Power Switch Variable Frequency Control with 50% Duty Cycle for Half-Bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode Fixed Dead Time (350ns) Optimized for M |
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Fairchild Semiconductor |
Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal SuperFET™s with Fast-Recovery Type Body Diode (trr=120ns) for FSFR2100 and UniFETs with Fas |
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Fairchild Semiconductor |
Power Switch Variable Frequency Control with 50% Duty Cycle for Half-Bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode Fixed Dead Time (350ns) Optimized for M |
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Fairchild Semiconductor |
(FSFM260N / FSFM300N) 30W FPS ! Internal Avalanche-Rugged SenseFET ! Advanced Burst-Mode Operation Consumes Under Description The FSFM260/300 is an integrated Pulse Width Modulator (PWM) and SenseFET specifically designed for high-performance offline Switch Mode Power Supplies ( |
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Fairchild Semiconductor |
Fairchild Power Switch (FPS) for Half-Bridge PWM Converters Optimized for Complementary Driven Half-Bridge Soft-Switching Converters Can be Applied to Various Topologies: Asymmetric PWM Half-Bridge Converters, Asymmetric PWM Flyback Converters, Asymmetric PWM Forward Converters, Active Clamp Flyback Conve |
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Fairchild Semiconductor |
Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode (trr<160ns). Fixed Dead Time (350ns) |
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Fairchild Semiconductor |
Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode (trr<160ns). Fixed Dead Time (350ns) |
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Fairchild Semiconductor |
Power Switch Variable Frequency Control with 50% Duty Cycle for Half-Bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode Fixed Dead Time (350ns) Optimized for M |
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Fairchild Semiconductor |
Power Switch Variable Frequency Control with 50% Duty Cycle for Half-Bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode Fixed Dead Time (350ns) Optimized for M |
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Fairchild Semiconductor |
Power Switch Variable Frequency Control with 50% Duty Cycle for Half-Bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode Fixed Dead Time (350ns) Optimized for M |
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Fairchild Semiconductor |
(FSFM260N / FSFM300N) 30W FPS ! Internal Avalanche-Rugged SenseFET ! Advanced Burst-Mode Operation Consumes Under Description The FSFM260/300 is an integrated Pulse Width Modulator (PWM) and SenseFET specifically designed for high-performance offline Switch Mode Power Supplies ( |
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Fairchild Semiconductor |
Green-Mode Fairchild Power Switch ! Internal Avalanche-Rugged SenseFET ! Advanced Burst-Mode Operation Consumes Under Description The FSFM260/261/300 is an integrated Pulse Width Modulator (PWM) and SenseFET specifically designed for high-performance offline Switch Mode Power Suppli |
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Fairchild Semiconductor |
Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal SuperFET™s with Fast-Recovery Type Body Diode (trr=120ns) for FSFR2100 and UniFETs with Fas |
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Fairchild Semiconductor |
Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal SuperFET™s with Fast-Recovery Type Body Diode (trr=120ns) for FSFR2100 and UniFETs with Fas |
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Fairchild Semiconductor |
Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode (trr<160ns). Fixed Dead Time (350ns) |
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Fairchild Semiconductor |
Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode (trr<160ns). Fixed Dead Time (350ns) |
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Fairchild Semiconductor |
Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode (trr<160ns). Fixed Dead Time (350ns) |
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Fairchild Semiconductor |
Power Switch ge and Currents Reverse Voltage 3.0 V Average Forward dc 'f Current/Segment or Decimal Point 25 mA Derate from 25° С Ambient Temperature 0.3mA/°C Peak Forward Current •pk Segment or Decimal Point (100 ms pulse width) 1000 pps, TA • 25°C 200 mA Vr FN |
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Fairchild Semiconductor |
Power Switch The HCF100 is controlled by a microprocessor. This conducts both self diagnostics and automatically calibrates the sensor when ambient conditions vary, thus avoiding false alarms. A hand-held datalogger can be connected to the HCF100 and information |
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