| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
FQB13N06L • • • • • • • 13.6A, 60V, RDS(on) = 0.11Ω @VGS = 10 V Low gate charge ( typical 4.8 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-P |
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Fairchild Semiconductor |
FQB13N10 • • • • • • • 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-P |
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Fairchild Semiconductor |
FQB10N20 * 5 5 * : 5 : !$ 7 * 1,)263 1,'((63 7 )(( '( .8( ±-( |
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Fairchild Semiconductor |
60V P-Channel MOSFET • • • • • • • -27A, -60V, RDS(on) = 0.07Ω @VGS = -10 V Low gate charge ( typical 33 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G! G S ! ● ● ▶ ▲ ● S D2 |
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Fairchild Semiconductor |
150V N-Channel MOSFET , 5 5 , = 5 = !$ ; , 1.9*:2 1.)++:2 ; )*+ &' '* 9* & ±9* |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 6.2A, 600V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! |
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Fairchild Semiconductor |
900V N-Channel MOSFET • • • • • • 5.8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 40 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! |
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Fairchild Semiconductor |
FQB8N60C • 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V • Low gate charge ( typical 28 nC) • Low Crss ( typical 12 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability D GS D2-PAK FQB Series GDS I2-PAK FQI Series Absolute Maximum Ratings T |
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Fairchild Semiconductor |
FQB95N03L low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features • Fast switching • rDS(ON) = 0. |
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Fairchild Semiconductor |
100V N-Channel MOSFET • • • • • • • 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching. 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-P |
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Fairchild Semiconductor |
500V N-Channel MOSFET ) 0+6&72 0+,((72 8 &(( %& 6 -& ,±1( ) ' ' ' ) ; ' ; )5 > > >57 7 7 9 |
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Fairchild Semiconductor |
100V LOGIC N-Channel MOSFET • • • • • • • • 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 4.6 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Low level gate drive requirme |
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Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET • • • • • • • 6.5A, 200V, RDS(on) = 0.75Ω @VGS = 10 V Low gate charge ( typical 6.8 nC) Low Crss ( typical 8.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct operation from logic dr |
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Fairchild Semiconductor |
800V N-Channel MOSFET 0+,((82 9 '(( %% 17 7% 1 ±;( ) & & & ) = & = )6 A A A68 8 8 : ) 9 &! < &! *!& |
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Fairchild Semiconductor |
N-Channel MOSFET • 5A, 500V, RDS(on) = 1.55 Ω @VGS = 10 V • Low gate charge ( typical 18nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistor |
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Fairchild Semiconductor |
FQB11P06 • • • • • • • -11.4A, -60V, RDS(on) = 0.175Ω @VGS = -10 V Low gate charge ( typical 13 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G! G S ! ● ● ▶ ▲ ● S |
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Fairchild Semiconductor |
200V N-Channel MOSFET • • • • • • 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! " " " ! |
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Fairchild Semiconductor |
100V P-Channel MOSFET • • • • • • • -16.5A, -100V, RDS(on) = 0.19Ω @VGS = -10 V Low gate charge ( typical 30 nC) Low Crss ( typical 100 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D G G S D2-PAK FQB Se |
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Fairchild Semiconductor |
60V LOGIC N-Channel MOSFET • • • • • • • 32A, 60V, RDS(on) = 0.035Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 50 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK |
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Fairchild Semiconductor |
250V N-Channel MOSFET • • • • • • 2.8A, 250V, RDS(on) = 2.2Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 4.7 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series |
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Desde 2024. D4U Semiconductor.
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