| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
FJAF6810D ltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Turn On Voltage Storage Time Fall Time Test Conditions VCB=1500V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=300mA, IC=0 VCE=5V, IC=1A VCE=5V, IC=6A IC |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor itter Saturation Voltage Cob Output Capacitance fT Current Gain Bandwidth Product * Pulse Test: Pulse Width£300ms, Duty Cycle£2% IC=-5mA, IE=0 IC=-50mA, RBE=¥ IE=-5mA, IC=0 VCB=-200V, IE=0 VEB=-6V, IC=0 VCE=-4V, IC=-3A IC=-5A, IB=-0.5A VCB=-10V |
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Fairchild Semiconductor |
FJAF6815 BVEBO Emitter-Base Breakdown Voltage hFE1 hFE2 DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage tSTG* Storage Time tF* Fall Time * Pulse Test: PW=20µs, duty Cycle=1% Pulsed VCB=1400V, |
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Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Turn On Voltage Storage Time Fall Time Test Conditions VCB=1500V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=300mA, IC=0 VCE=5V, IC=1A VCE=5V, IC=6A IC=6A, IB=1.5A IC=6A, IB= |
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Fairchild Semiconductor |
FJAF6812 ation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=8A IC=8A, IB=2A IC=8A, IB=2A VCC=200V, IC=7A, RL=30Ω IB1= 1.4A, IB2= - 2.8A 6 10 |
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Fairchild Semiconductor |
FJAF6806D ollector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Turn On Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=300mA, IC=0 VCE=5V, IC=1A VCE=5V, IC=4A IC=4A, IB=1A IC=4A, IB=1A |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor • High Current Capability: IC = 17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1962/FJA4213. • Thermal and e |
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Fairchild Semiconductor |
Power Amplifier V, IC=1A VCB=10V, f=1MHz VCC=20V, IC=1A=10IB1=-10IB2 RL=20Ω Min. 200 120 8 Typ. Max. Units V V V 0.1 0.1 120 250 0.5 1.2 30 210 0.26 0.68 6.68 mA mA V V MHz pF µs µs µs Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage |
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Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Turn On Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=300mA, IC=0 VCE=5V, IC=1A VCE=5V, IC=5A IC=5A, IB=1.2A IC=5A |
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Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor oltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IC=500µA, IE=0 IC=5mA, IB=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=10A IC |
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Fairchild Semiconductor |
High Voltage Color Display Horizontal Deflection Output n Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=6A IC=6A, IB=1.5A IC=6A, IB=1.5A VCC=200V, IC=6A, RL=33Ω IB1=1.2A, IB2= - 2.4A 6 10 5 8 3 1.5 3 0.2 V V µs µs Min Ty |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor • Audio Power Amplifier • High Current Capability : IC=10A • High Power Dissipation • Wide S.O.A • Complement to FJAF4210 Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC RθJC TJ TSTG Parameter Collector-Base |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor • High Current Capability: IC = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal an |
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Fairchild Semiconductor |
High Voltage Switch Mode Applications E = 10V, IC = 0.5A VCC =125V, IC = 8A IB1 = - IB2 = 1.6A RL = 15,6Ω 4 1.1 3 0.7 180 8 6 Min. 400 Typ. Max. 1 40 30 1 1.5 3 1.2 1.6 V V V V V pF MHz µs µs µs Units V mA VBE(sat) Cob fT tON tSTG tF Base-Emitter Saturation Voltage Output Capacitance C |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor ter Saturation Voltage Cob Output Capacitance fT Current Gain Bandwidth Product * Pulse Test: Pulse Width£300ms, Duty Cycle£2% IC=5mA, IE=0 IC=50mA, RBE=¥ IE=5mA, IC=0 VCB=200V, IE=0 VEB=6V, IC=0 VCE=4V, IC=3A IC=5A, IB=0.5A VCB=10V, f=1MHz VCE |
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Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor ollector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Turn On Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=300mA, IC=0 VCE=5V, IC=1A VCE=5V, IC=4A IC=4A, IB=1A IC=4A, IB=1A |
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Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor oltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=6A IC=6A, IB=1.5A IC=6A, IB=1.5A VCC=200V, IC=6A, RL=33Ω IB1=1.2A, IB2= - 2.4A 6 10 5 8 3 1.5 3 0.2 V V µs µs Min Typ M |
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Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor age Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=8A IC=8A, IB=2A IC=8A, IB=2A VCC=200V, IC=7A, RL=30Ω IB1= 1.4A, IB2= - 2.8A 6 10 5 40 8 3 1.5 3 0.2 V V µs µs Min Typ Max |
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Fairchild Semiconductor |
High Voltage Color Display Horizontal Deflection Output kdown Voltage DC Current Gain Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IC=500µA, IE=0 IC=5mA, IB=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=8.5A VCE=5V, IC=11A IC=11A, IB=2.75A IC=11A, IB=2.75A VCC=200V, IC=10A, RL=20Ω IB1=2.0A, IB |
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Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor or-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IC=500µA, IE=0 IC=5mA |
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Desde 2024. D4U Semiconductor.
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