No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
40A Field Stop IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A • High Input Impedance • Fast Switching • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC, Microwave Oven, Telecom, ESS General Description Using novel f |
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Fairchild Semiconductor |
Field Stop IGBT • High current capability • Low saturation voltage: VCE(sat) =2.3V @ IC = 60A • High input impedance • Fast switching • RoHS compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer t |
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Fairchild Semiconductor |
IGBT • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.75 V @ IC = 30 A • High Input Impedance • RoHS Compliant Applications • Induction Heating, Microwave Oven General Description Using advanced field stop trench and shorted-anode technology |
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Fairchild Semiconductor |
IGBT • Maximum Junction Temperature : TJ = 175oC • Positive Temperaure Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.85 V ( Typ.) @ IC = 40 A • High Input Impedance • Fast Switching • Tighten Par |
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Fairchild Semiconductor |
Field Stop IGBT • High current capability • Low saturation voltage: VCE(sat) =2.3V @ IC = 60A • High input impedance • Fast switching • RoHS compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer t |
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Fairchild Semiconductor |
IGBT • FS Trench Technology, Positive Temperature Coefficient • High Speed Switching • Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 40 A • 100% of the Parts tested for ILM(1) • High Input Impedance • RoHS Compliant Applications • Solar Inverter, Welder, |
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Fairchild Semiconductor |
80A Field Stop IGBT • High current capability • Low saturation voltage: VCE(sat) =1.8V @ IC = 40A • High input impedance • Fast switching • RoHS compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer |
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Fairchild Semiconductor |
Field Stop IGBT • Maximum Junction Temperature: TJ = 175oC • Positive Temperaure Co-efficient for easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 60 A • High Input Impedance • Fast Switching: EOFF = 7.5 uJ/A |
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Fairchild Semiconductor |
IGBT • Maximum Junction Temperature : TJ =175oC • Positive Temperature Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 40 A • 100% of the Parts Tested for ILM(1) • High Input Impeda |
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Fairchild Semiconductor |
Field Stop IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A • High Input Impedance • Fast Switching • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC, Microwave Oven, Telecom, ESS General Description Using novel f |
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Fairchild Semiconductor |
Field-Stop IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 60 A • High Input Impedance • Fast Switching • RoHS Compliant Applications • Solar Inverter, UPS, Welder and PFC March 2015 General Description Using novel field stop IGBT t |
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Fairchild Semiconductor |
Field Stop Trench IGBT • Maximum Junction Temperature : TJ = 175oC • Positive Temperature Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.6 V(Typ.) @ IC = 40 A • 100% of the Parts Tested for ILM(1) • High Input Impe |
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Fairchild Semiconductor |
IGBT • Maximum Junction Temperature : TJ =175oC • Positive Temperature Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 60 A • 100% of the Parts Tested for ILM(1) • High Input Impeda |
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Fairchild Semiconductor |
IGBT • Maximum Junction Temperature : TJ = 175oC • Positive Temperaure Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.45 V ( Typ.) @ IC = 40 A • 100% of the Parts tested for ILM(1) • High Input Im |
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Fairchild Semiconductor |
Field Stop Trench IGBT • Maximum Junction Temperature : TJ =175oC • Positive Temperaure Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 50 A • 100% of the Parts Tested for ILM(1) • High Input Impedan |
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Fairchild Semiconductor |
80A Field Stop IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A • High Input Impedance • Fast Switching • RoHS Complaint Applications • Induction Heating, PFC, Telecom, ESS E C G November 2013 General Description Using novel field s |
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Fairchild Semiconductor |
Field Stop IGBT • High current capability • Low saturation voltage: VCE(sat) =1.8V @ IC = 40A • High input impedance • Fast switching • RoHS compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer |
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Fairchild Semiconductor |
Field Stop IGBT • High current capability • Low saturation voltage: VCE(sat) =1.8V @ IC = 40A • High input impedance • Fast switching • RoHS compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer |
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Fairchild Semiconductor |
40A Field Stop IGBT • Maximum Junction Temperature : TJ = 175oC • Positive Temperaure Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A • High Input Impedance • Fast Switching: EOFF = 6.5 uJ/A |
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Fairchild Semiconductor |
20A Field Stop IGBT • High current capability • Low saturation voltage: VCE(sat) =2.2V @ IC = 20A • High input impedance • Fast switching • RoHS compliant Applications • Induction Heating, UPS, SMPS, PFC September 2008 tm General Description Using Novel Field Stop IGBT |
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