| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
MOSFET General Description Q1: N-Channel Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 32 A Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 28 A Low |
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Fairchild Semiconductor |
N-Channel UniFET MOSFET • RDS(on) = 48 mΩ(Typ.) @ VGS = 10 V, ID = 25.5 A • Low Gate Charge (Typ. 55 nC) • Low Crss (Typ. 63 pF) Applications • PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply March 2016 Description UniFETTM MOSFET is Fairchild Semicon |
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Fairchild Semiconductor |
N-Channel MOSFET • • • • • 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V Low gate charge ( typical 36.8 nC) Low Crss ( typical 39 pF) Fast switching Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced usin |
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Fairchild Semiconductor |
Ultra FRFET MOSFET N-Channel UniFETTM Ultra FRFETTM MOSFET Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better swit |
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Fairchild Semiconductor |
N-Channel MOSFET • r DS(ON) = 4.3mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 61nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82575 Applications • |
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Fairchild Semiconductor |
150V N-Channel MOSFET • 22 A, 150 V. RDS(ON) = 80 mΩ @ VGS = 10 V RDS(ON) = 90 mΩ @ VGS = 6 V • Low gate charge (40nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • 175°C maximum junction temperature rating D D G G D S |
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Fairchild Semiconductor |
N-Channel MOSFET 48A, 30 V. RDS(ON) = 0.0125 Ω @ VGS = 10 V, RDS(ON) = 0.017 Ω @ VGS = 4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppress |
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Fairchild Semiconductor |
N-Channel MOSFET 80 A, 30 V. RDS(ON) = 0.0065 Ω @ VGS=10 V, RDS(ON) = 0.0085 Ω @ VGS= 4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppresso |
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Fairchild Semiconductor |
N-Channel MOSFET • • • • • • 55A, 60V, RDS(on) = 0.022 Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transis |
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Fairchild Semiconductor |
N-Channel MOSFET • 40 A, 30 V. RDS(ON) = 0.018 Ω @ VGS = 10 V RDS(ON) = 0.024 Ω @ VGS = 4.5 V. • Critical DC electrical parameters specified at elevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient sup |
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Fairchild Semiconductor |
N-Channel MOSFET 33 A, 30 V. RDS(ON) = 0.022 Ω @ VGS=10 V RDS(ON) = 0.036 Ω @ VGS=4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. H |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 1.5 (Max.) @ VGS = 10 V, ID = 2.5 A • Low Gate Charge (Typ.12.8 nC) • Low Crss (Typ. 9 pF) • 100% Avalanche Tested • Improved dv/dt Capability Applications • LCD/LED TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply Des |
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Fairchild Semiconductor |
FDPF12N50FT • RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A • Low gate charge ( Typ. 21nC) • Low Crss ( Typ. 11pF) • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant tm Description These N-Channel enhancement mode power field eff |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 9 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply Description UniFETTM MOSFET is Fairchild Semicond |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 2.85 mΩ (Typ.) @ VGS = 10 V, ID = 50 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr • Soft Reverse-Recovery Body Diode • Enables High Efficiency in Synchronous Rectification • Fast Switching Speed • 100% UIL Tested • RoHS Com |
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Fairchild Semiconductor |
N-Channel MOSFET • 5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V • Low gate charge ( typical 12.8 nC) • Low Crss ( typical 9 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect t |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 31 mΩ (Typ.) @ VGS = 10 V, ID = 15 A • Fast Switching Speed • Low Gate Charge, QG = 14.3 nC (Typ.) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description T |
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Fairchild Semiconductor |
N-Channel PowerTrench MOSFET • RDS(on) = 2.21 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 112 nC • Soft Reverse-Recovery Body Diode • Enables High Efficiency in Synchronous Rectification • Fast Switching Speed • 100% UIL Tested |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A • Fast Switching • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET i |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.9 A • Low Gate Charge (Typ. 8.3 nC) • Low Crss (Typ. 3.7 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • Consumer Appliances • Lighting • |
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Desde 2024. D4U Semiconductor.
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