No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
Small Signal Diode 4AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 0.043Ω ( Typ.)@ VGS = 10V, ID = 50A • Low gate charge ( Typ. 238nC) • Low Crss ( Typ. 64pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS Compliant UniFETTM May 2009 Description These N-Channel enhancement |
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Fairchild Semiconductor |
Diode |
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Fairchild Semiconductor |
Ultra Fast Diodes |
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Fairchild Semiconductor |
High Conductance Switching Diodes |
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Fairchild Semiconductor |
Diode |
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Fairchild Semiconductor |
Diodes |
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Fairchild Semiconductor |
High Conductance/ Low Leakage Diode ratings are limiting values above which the serviceability of any semiconductor device may be impaired Electrical Characteristics SYM BV IR TA = 25OC unless otherwise noted CHARACTERISTICS Breakdown Voltage Reverse Leakage MIN 150 MAX UNITS V I |
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Fairchild Semiconductor |
Ultra High Speed Diodes |
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Fairchild Semiconductor |
High Conductance Ultra Fast Diode imits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resista |
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Fairchild Semiconductor |
High Voltage General PurPose Diodes |
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Fairchild Semiconductor |
Small Signal Diode 4AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) |
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Fairchild Semiconductor |
Small Signal Diode mal Resistance, Junction to Ambient Characteristic Value 500 300 Units mW °C/W Electrical Characteristics Symbol VR VF IR CT TA = 25°C unless otherwise noted Parameter Breakdown Voltage Forward Voltage Reverse Current Total Capacitance Test Co |
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Fairchild Semiconductor |
High Conductance/ Low Leakage Diode values above which the serviceability of any semiconductor device may be impaired Electrical Characteristics SYM BV IR VF TA = 25OC unless otherwise noted CHARACTERISTICS Breakdown Voltage Reverse Leakage Forward Voltage MIN 200 MAX UNITS V IR |
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Fairchild Semiconductor |
Ultra Fast Diodes |
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Fairchild Semiconductor |
General Purpose Diodes |
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Fairchild Semiconductor |
Ultra Fast Diodes |
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Fairchild Semiconductor |
Ultra Fast Diodes |
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Fairchild Semiconductor |
High Speed Switching Diodes |
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Fairchild Semiconductor |
Small Signal Diode 4AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) |
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