logo

Fairchild Semiconductor F90 DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
FQAF90N08

Fairchild Semiconductor
80V N-Channel MOSFET







• 56A, 80V, RDS(on) = 0.016Ω @VGS = 10 V Low gate charge ( typical 84 nC) Low Crss ( typical 200 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G D S ! " " " TO-3P
Datasheet
2
F9020

Fairchild Semiconductor
FJPF9020
tter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Condition IC = - 100uA, IE = 0 IC = - 500uA, IB = 0 IE = - 200mA, IC = 0 VCE = - 550V, IE = 0 VEB = - 6V, IC = 0 VCE = - 4V, IC = - 1A IC =
Datasheet
3
FJPF9020

Fairchild Semiconductor
PNP Epitaxial Darlington Transistor
DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Condition IC = - 100uA, IE = 0 IC = - 500uA, IB = 0 IE = - 200mA, IC = 0 VCE = - 550V, IE = 0 VEB = - 6V, IC = 0 VCE = - 4V, IC = - 1A IC = - 1A, IB = - 20mA IC
Datasheet
4
FQPF90N08

Fairchild Semiconductor
80V N-Channel MOSFET







• 44A, 80V, RDS(on) = 0.016Ω @VGS = 10 V Low gate charge ( typical 84 nC) Low Crss ( typical 200 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! GD S ! " " " TO-220
Datasheet
5
FQPF90N10V2

Fairchild Semiconductor
100V N-Channel MOSFET






• 90 A, 100V, RDS(on) = 0.01Ω @VGS = 10 V Low gate charge ( typical 147 nC) Low Crss ( typical 300 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !
● ◀ ▲

● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series !
Datasheet
6
FQPF90N10V2

Fairchild Semiconductor
100V N-Channel MOSFET






• 90 A, 100V, RDS(on) = 0.01Ω @VGS = 10 V Low gate charge ( typical 147 nC) Low Crss ( typical 300 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !
● ◀ ▲

● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series !
Datasheet
7
FGPF90N30

Fairchild Semiconductor
PDP IGBT

• High Current Capability
• Low saturation voltage: VCE(sat) =1.5V @ IC = 60A
• High Input Impedance
• Fast switch
• RoHS Complaint tm Description Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss.
Datasheet



logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad