| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
KSC5802D Fall Time Test Condition VCE = 1400V, VBE=0 VCB = 800V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 6A IC = 6A, IB = 1.5A IC = 6A, IB = 1.5A VCC = 200V, IC = 6A IB1 = 1.2A, IB2= - 2.4A RL = 33.3Ω 0.1 50 15 7 Min. Typ. Max. 1 10 250 40 1 |
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Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor 0 VEB = 4V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 6A IC = 6A, IB = 1.5A IC = 6A, IB = 1.5A VCC = 200V, IC = 6A IB1 = 1.2A, IB2= - 2.4A RL = 33.3Ω 0.1 15 7 Min. Typ. Max. 1 10 1 48 10 3 1.5 0.3 V V µs Units mA uA mA ©2000 Fairchild Semiconductor I |
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Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor Fall Time Test Condition VCE = 1400V, VBE=0 VCB = 800V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 6A IC = 6A, IB = 1.5A IC = 6A, IB = 1.5A VCC = 200V, IC = 6A IB1 = 1.2A, IB2= - 2.4A RL = 33.3Ω 0.1 50 15 7 Min. Typ. Max. 1 10 250 40 1 |
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Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor mper Diode Turn On Voltage Fall Time Test Condition VCE = 1400V, VBE = 0 VCB = 800V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 1.0A VCE = 5V, IC = 5.0A IC = 5A, IB = 1.2A IC = 5A, IB = 1.2A IF = 6A VCC = 200V, IC = 4A IB1 = 0.8A, IB2 = -1.6A RL = 50Ω 40 |
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Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor |
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Desde 2024. D4U Semiconductor.
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