Fairchild Semiconductor BSR Hoja de datos

No.	parte #	Fabricante	Descripción
1	BSR57	Fairchild Semiconductor	N-Channel Low-Frequency Low-Noise Amplifier = 0V, ID = 0 VDS = 0V, VGS = 10V VDD = 10V, VGS(on) = 0V ID = 10mA, VGS(off) = 6.0V 20 2.0 Min. 40 Max. 1.0 100 6.0 0.5 40 5.0 6.0 4.0 50 Units V nA mA V V Ω pF ns ns ns ©2003 Fairchild Semiconductor Corporation Rev. A, February 2003 BSR57 Packag
2	BSR18	Fairchild Semiconductor	PNP General Purpose Amplifier herwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max BSR18A 350 2.8 357 Units mW mW/°C °C/W Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 1997 Fairchild Semiconductor Corpora
3	BSR18A	Fairchild Semiconductor	PNP Amplifier - Continuous Junction and Storage Temperature Range -40 -40 -5 -200 -55 to +150 V V V mA °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted
4	BSR50	Fairchild Semiconductor	NPN Darlington Transistor 10V, IC = 0.5A IC = 500mA, IB = 500µA IC = 1.0A, IB = 4.0mA IC = 500mA, IB = 500µA IC = 1.0mA, IB = 4.0mA 1,000 2,000 1.3 1.6 0.9 2.2 V V Min. 45 60 5 50 50 Typ. Max. Units V V V nA nA Thermal Characteristics TA=25°C unless otherwise noted Symbol PD
5	BSR56	Fairchild Semiconductor	N-Channel Low-Frequency Low Noise Amplifier VDD = 10V, VGS(on) = 0V ID = 20mA, VGS(off) = 10V 50 4 10 750 25 5 6 3 25 Min. 40 Typ. Max. 1 Units V nA mA V mV Ω pF nS nS nS ©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002 BSR56 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10
6	BSR58	Fairchild Semiconductor	N-Channel Low-Frequency Low Noise Amplifier DD = 10V, VGS(on) = 0V ID = 10mA, VGS(off) = 10V 8 0.8 Min. 40 Typ. Max. 1 80 4 0.4 60 5 10 10 100 Units V nA mA V V Ω pF nS nS nS ©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002 BSR58 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.
7	BSR13	Fairchild Semiconductor	NPN General Purpose Amplifier IC = 0 IC = 0.1mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V * IC = 150mA, VCE = 1.0V * IC = 500mA, VCE = 10V * IC = 150mA, IB = 15V IC = 500mA, IB = 50V IC = 150mA, IB = 15V IC = 500mA, IB = 50V IC = 20mA, VCE = 20V
8	BSR14	Fairchild Semiconductor	NPN General Purpose Amplifier
9	BSR15	Fairchild Semiconductor	PNP General Purpose Amplifier BSR15 Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics BV(BR)CEO BV(BR)CBO BV(BR)EBO ICBO ICEX IBEX hFE Parameter Test Condition IC = -10mA, IB = 0 IC = -100µA, IE = 0 IE = -10µA, IC = 0 VCB = -50V VCB = -50V, T
10	BSR16	Fairchild Semiconductor	PNP General Purpose Amplifier BSR16 Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics BV(BR)CEO BV(BR)CBO BV(BR)EBO ICBO ICEX IBEX hFE Parameter Test Condition IC = -10mA, IB = 0 IC = -100µA, IE = 0 IE = -10µA, IC = 0 VCB = -50V VCB = -50V, TA
11	BSR17	Fairchild Semiconductor	NPN General Purpose Amplifier tion Derate above 25°C Thermal Resistance, Junction to Ambient Max BSR17A 350 2.8 357 Units mW mW/°C °C/W Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 1997 Fairchild Semiconductor Corporation BSR17A NPN General Purpose Amplifier (conti
12	BSR17A	Fairchild Semiconductor	NPN General Purpose Amplifier tion Derate above 25°C Thermal Resistance, Junction to Ambient Max BSR17A 350 2.8 357 Units mW mW/°C °C/W Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 1997 Fairchild Semiconductor Corporation BSR17A NPN General Purpose Amplifier (conti