| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
NPN RF Transistor = 0.1mA IC = 1mA, IB = 0.1mA IC = 7.0mA, VCE = 10V, f = 100MHz VCB = 10V, IE = 0, f = 1.0MHz 65 Min. 40 40 4.0 100 225 0.65 0.74 1100 0.34 V V MHz pF Max. Units V V V nA Collector-Emitter Breakdown Voltage * Collector-Base BreakdownVoltage Emitter-Ba |
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Fairchild Semiconductor |
N-Channel RF Amplifiers S = 15V, VGS = 0 3 6 11 4.5 7 13 18 mA VDS = 15V, VGS = 0, f = 1KHz mmhos ©2003 Fairchild Semiconductor Corporation Rev. A, June 2003 BF256A/BF256B/BF256C Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27 |
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Fairchild Semiconductor |
N-Channel Switch ource Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage Zero-Gate Voltage Drain Current * a Conditions IG = 1.0µA, VDS = 0 VGS = -15V, VDS = 0 VDS = 15V, ID = 10nA VDS = 15V, VGS = 0 Min. -25 Max Units V -5.0 -0.6 60 -14.5 140 n |
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Fairchild Semiconductor |
N-Channel RF Amplifier Case Thermal Resistance, Junction to Ambient Max BF244A / BF244B / BF244C 350 2.8 125 357 Units mW mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation BF244A / BF244B / BF244C N-Channel RF Amplifier (continued) Electrical Characteristics |
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Fairchild Semiconductor |
N-Channel Amplifiers Common Source Forward gfs Transconductance VGS = 15V, VGS = 0 2 6 12 3 6.5 15 25 6.5 mA VGS = 15V, VGS = 0, f = 1KHz mmhos ©2003 Fairchild Semiconductor Corporation Rev. A1, June 2003 BF245A/BF245B/BF245C Package Dimensions TO-92 4.58 –0.1 |
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Fairchild Semiconductor |
N-Channel Amplifiers Common Source Forward gfs Transconductance VGS = 15V, VGS = 0 2 6 12 3 6.5 15 25 6.5 mA VGS = 15V, VGS = 0, f = 1KHz mmhos ©2003 Fairchild Semiconductor Corporation Rev. A1, June 2003 BF245A/BF245B/BF245C Package Dimensions TO-92 4.58 –0.1 |
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Fairchild Semiconductor |
N-Channel RF Amplifiers S = 15V, VGS = 0 3 6 11 4.5 7 13 18 mA VDS = 15V, VGS = 0, f = 1KHz mmhos ©2003 Fairchild Semiconductor Corporation Rev. A, June 2003 BF256A/BF256B/BF256C Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27 |
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Fairchild Semiconductor |
N-Channel RF Amplifiers • This device is designed for VHF / UHF amplifiers • Sourced from process 50 1 TO-92 1. Gate 2. Source 3. Drain Ordering Information Part Number BF256B Top Mark BF256B Package TO-92 3L Packing Method Bulk Absolute Maximum Ratings Stresses exce |
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Fairchild Semiconductor |
N-Channel RF Amplifier Case Thermal Resistance, Junction to Ambient Max BF244A / BF244B / BF244C 350 2.8 125 357 Units mW mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation BF244A / BF244B / BF244C N-Channel RF Amplifier (continued) Electrical Characteristics |
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Fairchild Semiconductor |
N-Channel RF Amplifier Case Thermal Resistance, Junction to Ambient Max BF244A / BF244B / BF244C 350 2.8 125 357 Units mW mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation BF244A / BF244B / BF244C N-Channel RF Amplifier (continued) Electrical Characteristics |
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Fairchild Semiconductor |
N-Channel Amplifiers Common Source Forward gfs Transconductance VGS = 15V, VGS = 0 2 6 12 3 6.5 15 25 6.5 mA VGS = 15V, VGS = 0, f = 1KHz mmhos ©2003 Fairchild Semiconductor Corporation Rev. A1, June 2003 BF245A/BF245B/BF245C Package Dimensions TO-92 4.58 –0.1 |
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Fairchild Semiconductor |
N-Channel Amplifiers Common Source Forward gfs Transconductance VGS = 15V, VGS = 0 2 6 12 3 6.5 15 25 6.5 mA VGS = 15V, VGS = 0, f = 1KHz mmhos ©2003 Fairchild Semiconductor Corporation Rev. A1, June 2003 BF245A/BF245B/BF245C Package Dimensions TO-92 4.58 –0.1 |
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Desde 2024. D4U Semiconductor.
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