Fairchild Semiconductor BD5 Hoja de datos

No.	parte #	Fabricante	Descripción
1	BD534	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor - 5V, IC = - 10mA VCE = - 2V, IC = - 2A 40 20 15 25 15 30 15 40 20 - 0.8 - 1.5 3 12 75 100 - 0.8 V V V MHz Min. Typ. Max. - 100 - 100 - 100 - 100 - 100 - 100 -1 Units µA µA µA µA µA µA mA ICES Collector Cut-off Current IEBO hFE Emitter Cut-off C
2	BD535	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor : ALL DEVICE Test Condition VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10mA VCE = 2V, IC = 500mA VCE = 2V, IC = 2A 20 15 40 25 15 30 15 40 20 0.8 1.5
3	BD533	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor : ALL DEVICE Test Condition VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10mA VCE = 2V, IC = 500mA VCE = 2V, IC = 2A 20 15 40 25 15 30 15 40 20 0.8 1.5
4	BD536	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor - 5V, IC = - 10mA VCE = - 2V, IC = - 2A 40 20 15 25 15 30 15 40 20 - 0.8 - 1.5 3 12 75 100 - 0.8 V V V MHz Min. Typ. Max. - 100 - 100 - 100 - 100 - 100 - 100 -1 Units µA µA µA µA µA µA mA ICES Collector Cut-off Current IEBO hFE Emitter Cut-off C
5	BD537	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor : ALL DEVICE Test Condition VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10mA VCE = 2V, IC = 500mA VCE = 2V, IC = 2A 20 15 40 25 15 30 15 40 20 0.8 1.5
6	BD538	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor - 5V, IC = - 10mA VCE = - 2V, IC = - 2A 40 20 15 25 15 30 15 40 20 - 0.8 - 1.5 3 12 75 100 - 0.8 V V V MHz Min. Typ. Max. - 100 - 100 - 100 - 100 - 100 - 100 -1 Units µA µA µA µA µA µA mA ICES Collector Cut-off Current IEBO hFE Emitter Cut-off C