Fairchild Semiconductor BCX Hoja de datos

No.	parte #	Fabricante	Descripción
1	BCX17	Fairchild Semiconductor	PNP General Purpose Amplifier Continuous Junction and Storage Temperature Range -45 -50 -5 -500 -55 to +150 V V V mA °C © 2002 Fairchild Semiconductor Corporation BCX17 Rev. 1.1.0 1 www.fairchildsemi.com BCX17 — PNP General-Purpose Amplifier Thermal Characteristics Values
2	BCX19	Fairchild Semiconductor	NPN Medium Power Transistor off Current DC Current Gain On Characteristics VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage 0.62 1.2 V V Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJA Parameter Total Device Dissipation D
3	BCX71G	Fairchild Semiconductor	PNP EPITAXIAL SILICON TRANSISTOR mA IC= -2mA, VCE= -5V VCB= -10V, IE=0 f=1MHz IC=0.2mA, VCE=5V RS=2KΩ , f=1KHz IC= -10mA, IB1= -1mA IB2= -1mA, VBB=3.6V RL=990Ω Min -45 -5 120 60 -20 220 -0.25 -0.55 -0.85 -1.05 -0.75 6 6 150 800 Max Unit V V nA -0.6 -0.68 -0.6 V V V V V pF dB ns ns
4	BCX20	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor Switching and Amplifier Applications = 1V, IC = 500mA IC = 500mA, IB = 50mA VCE = 1A, IB = 500mA Min. 25 30 5 Max Units V V V 100 10 100 70 40 600 nA nA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 0.62 1.2 V V ©2005 Fairchild Semiconductor Corporation
5	BCX70H	Fairchild Semiconductor	NPN EPITAXIAL SILICON TRANSISTOR 0.55 0.85 1.05 0.75 V V V V V MHz pF dB ns ns Max Unit V V nA nA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Turn On Time Turn Off Time
6	BCX71K	Fairchild Semiconductor	PNP EPITAXIAL SILICON TRANSISTOR s Junction and Storage Temperature Range -45 -45 -5 -500 -55 to +150 V V V mA °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applica
7	BCX70G	Fairchild Semiconductor	NPN EPITAXIAL SILICON TRANSISTOR , IB=0.25mA IC=50mA, IB=1.25mA IC=2mA, VCE=5V VCE=5V, IC=10mA VCB=10V, IE=0 f=1MHz IC=0.2mA, VCE=5V f=1KHz, RS=2KΩ IC=10mA, IB1=1mA IB2=1mA, VBB=3.6V RL=990Ω R1=R2=5KΩ Min 45 5 20 20 220 0.35 0.55 0.85 1.05 0.75 Max Unit V V nA nA 120 60 0.6 0.7 0.
8	BCX70J	Fairchild Semiconductor	NPN EPITAXIAL SILICON TRANSISTOR 0.55 0.85 1.05 0.75 V V V V V MHz pF dB ns ns Max Unit V V nA nA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Turn On Time Turn Off Time
9	BCX70K	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor 6V, IB2=1.0mA R1=R2=5KΩ, RL=990Ω Marking 0.6 0.7 0.55 125 4.5 6 150 800 100 380 100 Min. 45 5 20 20 630 0.35 0.55 0.85 1.05 0.75 V V V V V MHz pF dB ns ns Max. Units V V nA nA VCE (sat) VBE (sat) VBE (on) fT Cob NF tON tOFF Collector-Emitter Satura
10	BCX71J	Fairchild Semiconductor	PNP EPITAXIAL SILICON TRANSISTOR 6 150 800 V V V V V pF dB ns ns Max Unit V V nA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Noise Figure Turn On Time Turn Off Time VCE (sat) VBE (sat) VDE (on) COB NF
11	BCX79	Fairchild Semiconductor	PNP General Purpose Amplifier Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max BCX79 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation BCX79 PNP General Purpose Ampl