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Fairchild Semiconductor |
PNP General Purpose Amplifier tage Collector Current - Continuous Operating and Storage Junction Temperature Range -60 -60 -5 -1.2 -55 to +150 V V V A °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild S |
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Fairchild Semiconductor |
PNP General Purpose Amplifier )EBO ICBO IEBO hFE Parameter Test Condition IC = -10mA, IB = 0 IC = -100µA, IE = 0 IE = -10µA, IC = 0 VCB = -30V, IE = 0 VCB = -30V, IE = 0, Ta = 125°C VEB = -5.0V, IC = 0 IC = -5.0mA, VCE = -2.0V IC = -150mA, VCE = -2.0 IC = -500mA, VCE = -2.0V IC = |
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Fairchild Semiconductor |
NPN General Purpose Amplifier tor-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current DC Current Gain On Characteristics (1) 375 0.5 1 V V VCE(sat) VBE(on) Collector-Emitter Satu |
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Fairchild Semiconductor |
NPN General Purpose Amplifier tion Derate above 25°C Thermal Resistance, Junction to Ambient Max BCP54 1.5 12 83.3 Units W mW/°C °C/W ã 1997 Fairchild Semiconductor Corporation BCP54 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = |
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Fairchild Semiconductor |
NPN General Purpose Amplifier ction to Ambient 1 8 125 W mW/°C °C/W Units *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. ©1998 Fairchild Semiconductor Corporation Pr3947_REV A BCP56 NPN General Purpose Amplifier (continued |
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Fairchild Semiconductor |
PNP General Purpose Amplifier tage Collector Current - Continuous Operating and Storage Junction Temperature Range -80 -100 -5 -1.2 -55 to +150 V V V A °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild |
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Fairchild Semiconductor |
NPN General Purpose Amplifier rate above 25° C Thermal Resistance, Junction to Ambient Max BCP55 1.5 12 83.3 Units W mW/°C °C/W © 1997 Fairchild Semiconductor Corporation BCP55 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C |
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Fairchild Semiconductor |
PNP General Purpose Amplifier |
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Desde 2024. D4U Semiconductor.
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