| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
NPN Silicon Transistor itance fT Current Gain Bandwidth Product tON Turn On Time tSTG Storage Time tF Fall Time * Pulse test: PW≤300µs, Duty cycle≤2% VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, I |
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Fairchild Semiconductor |
High Voltage Fast-Switching NPN Power Transistor • High Voltage High Speed Power Switch Application • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 TO-220 1.Base 2.Collector 3.Emitter Ordering Information Part Number FJP13007TU |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V • Low gate charge ( typical 15 nC) • Low Crss ( typical 6.5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability D GS D2-PAK FQB Series GDS I2-PAK FQI Series D ! G! ● ◀▲ ● ● ! S Ab |
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Fairchild Semiconductor |
Gate-Driver Floating Channel for Bootstrap Operation to +600V 3A/3A Sourcing/Sinking Current Driving Capability Common-Mode dv/dt Noise Canceling Circuit 3.3V Logic Compatible Separate Logic Supply (VDD) Range from 3.3V to 20V Under-Voltage Lockout f |
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Fairchild Semiconductor |
Critical Conduction Mode PFC Controller Low Total Harmonic Distortion (THD) Precise Adjustable Output Over-Voltage Protection Open-Feedback Protection and Disable Function Zero Current Detector 150µs Internal Start-up Timer MOSFET Over-Current Protection Under-Voltage Lockout |
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Fairchild Semiconductor |
900V N-Channel MOSFET • • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss ( typical 23pF) Fast switching 100% avalanche tested Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 2 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 1 A • Low Gate Charge (Typ. 8.5 nC) • Low Crss (Typ. 4.3 pF) • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Param |
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Fairchild Semiconductor |
N-Channel MOSFET • • • • • • 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 11pF) Fast switching 100% avalanche tested Improved dv/dt capability September 2006 ® Description These N-Channel enhancement mode power field effe |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor • Audio Power Amplifier • Complement to KSC2328A • 3 W Output Application Ordering Information Part Number KSA928AOTA KSA928AYTA Top Mark A928A OA928A Y- 1 TO-92L 1. Emitter 2. Collector 3. Base Package TO-92 3L TO-92 3L Packing Method Ammo Am |
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Fairchild Semiconductor |
N-Channel MOSFET • 4.0 A, 900 V, RDS(on) = 4.2 Ω (Max.) @ VGS = 10 V, ID = 2.0 A • Low Gate Charge (Typ. 17 nC) • Low Crss (Typ. 5.6 pF) • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDS |
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Fairchild Semiconductor |
PNP EPITAXIAL SILICON TRANSISTOR |
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Fairchild Semiconductor |
6-Pin DIP Random-phase Optoisolator minal Voltage Peak Repetitive Surge Current (PW = 1 ms, 120 pps) Total Power Dissipation @ TA = 25°C Derate above 25°C TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 Second Duration) Total Power Dissipation @ TA = 25°C Derate abov |
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Fairchild Semiconductor |
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS • Compact 4-pin package • Current transfer ratio in selected groups: H11AA814: 20-300% H11A817: H11AA814A: 50-150% H11A817A: H11A617A: 40%-80% H11A817B: H11A617B: 63%-125% H11A817C: H11A617C: 100%-200% H11A817D: H11A617D: 160%-320% • Minimum BVCEO of |
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Fairchild Semiconductor |
Gate-Driver Floating Channels for Bootstrap Operation to +600V Typically 4.5A/4.5A Sourcing/Sinking Current Driving Description The FAN7390 is a monolithic high- and low-side gatedrive IC, which can drive high speed MOSFETs and IGBTs that operate up to +600 |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 18 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S |
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Fairchild Semiconductor |
300V N-Channel MOSFET • RDS(on) = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5 A • Low Gate Charge (Typ. 77 nC) • Low Crss (Typ. 80 pF) • 100% Avalanche Tested Applications • PDP TV • Uninterruptible Power Supply • AC-DC Power Supply May 2014 Description UniFETTM MOSFET is Fairc |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A • Ultra Low Gate Charge (Typ.Qg = 17.8nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant SupreMOSTM February 2010 Description The SupreMOS MOSFET, Fairchild’s next gener |
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Fairchild Semiconductor |
NPN Transistor est Condition IC=100mA, IB=0 VCB=40V, IE=0 VEBO=8V, IC=0 VCE=1V, IC=500mA VCE=1V, IC=2A VCE=2V, IC=5A IC=500mA, IB=50mA IC=2A, IB=200mA IC=5A, IB=1A IC=5A, IB=2A VCE=1V, IC=2A VCE=10V, IC=100mA VCB=10V, IE=0, f=0.1MHz 65 80 70 45 10 180 0.3 0.75 1.8 |
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Fairchild Semiconductor |
Instrumentantion Operational Amplifier w.DataSheet4U.com et4U.com DataSheet4U.com e DataShe DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com e DataShe DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.co |
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Fairchild Semiconductor |
500V N-Channel MOSFET • • • • • • 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V Low gate charge ( typical 43nC) Low Crss ( typical 20pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! " " " ! S |
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Desde 2024. D4U Semiconductor.
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