| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A • Fast Switching • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET i |
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Fairchild Semiconductor |
IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 75 A • High Input Impedance • Fast Switching : EOFF = 10 uJ/A • RoHS Compliant June 2014 General Description Using novel field stop IGBT technology, Fairchild’s new series o |
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Fairchild Semiconductor |
N-Channel MOSFET • • • • • • 75A, 75V, RDS(on) = 0.011Ω @VGS = 10 V Low gate charge ( typical 64 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transist |
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Fairchild Semiconductor |
FDP75N08 • • • • • • 75A, 75V, RDS(on) = 0.011Ω @VGS = 10 V Low gate charge ( typical 150 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transis |
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Fairchild Semiconductor |
N-Channel MOSFET • 75A, 280V, RDS(on) = 0.041Ω @VGS = 10 V • Low gate charge ( typical 111 nC) • Low Crss ( typical 90 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effec |
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Fairchild Semiconductor |
N-Channel MOSFET • 46A, 280V, RDS(on) = 0.041Ω @VGS = 10 V • Low gate charge ( typical 111 nC) • Low Crss ( typical 90 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effec |
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Fairchild Semiconductor |
N-Channel MOSFET • 75 A, 75 V, RDS(on) = 11 mΩ @ VGS = 10 V • Low Gate Charge (Typ. 145 nC) • Low Crss (Typ. 86 pF) • Fast Switching • Improved dv/dt Capability December 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based o |
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Fairchild Semiconductor |
75A Field Stop IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) =2.3V @ IC = 75A • High Input Impedance • Fast Switching • RoHS Compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer |
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Fairchild Semiconductor |
75A Field Stop IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) =1.9V @ IC = 75A • High Input Impedance • Fast Switching • RoHS Compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer t |
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Fairchild Semiconductor |
75A Field Stop IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) =2.3V @ IC = 75A • High Input Impedance • Fast Switching • RoHS Compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer |
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Fairchild Semiconductor |
75A Field Stop IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) =1.9V @ IC = 75A • High Input Impedance • Fast Switching • RoHS Compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer t |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A • Fast Switching • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET i |
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Desde 2024. D4U Semiconductor.
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