| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Fairchild Semiconductor |
Zeners 5.88 10 4 1N4691 5.89 6.2 6.51 10 5 1N4692 6.45 6.8 7.14 10 5.1 1N4693 7.125 7.5 7.785 10 5.7 1N4694 7.79 8.2 8.61 1 6.2 1N4695 8.265 8.7 9.135 1 6.6 1N4696 8.645 9.1 9.555 1 6.9 1N4697 9.5 10 10.5 1 7.6 1 |
|
|
|
|
Fairchild Semiconductor |
Dual N-Channel/ Notebook Power Supply MOSFET • • Q2: 8.6A, 30V. RDS(on) = 0.015 Ω @ VGS = 10V RDS(on) = 0.020 Ω @ VGS = 4.5V Q1: 6.3A, 30V. RDS(on) = 0.028 Ω @ VGS = 10V RDS(on) = 0.035 Ω @ VGS = 4.5V • • • Fast switching speed. Low gate charge (Q1 typical = 8.5nC). High performance trench te |
|
|
|
|
Fairchild Semiconductor |
FDS6986S • Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) = 20 mΩ @ VGS = 10V RDS(on) = 28 mΩ @ VGS = 4.5V • Q1: Optimized for low switching losses Low gate charge (6.5 nC typical) RDS(on) = 29 mΩ @ VGS = 10V RDS(on) |
|
|
|
|
Fairchild Semiconductor |
CCM Power Factor Correction Controller Continuous Conduction Mode Innovative Switching-Charge Multiplier-Divider Average-Current-Mode for Input-Current Shaping TriFault Detect™ Prevent Abnormal Operation for Feedback Loop Power-On Sequence Control Soft-Start Capability Brown |
|
|
|
|
Fairchild Semiconductor |
Dual Notebook Power Supply N-Channel PowerTrench SyncFET The FDS6986AS is designed to replace two single SO8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6986AS contains two u |
|
|
|
|
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13.5 A Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 11.0 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft re |
|
|
|
|
Fairchild Semiconductor |
Dual Notebook Power Supply N-Channel PowerTrench SyncFET • Q2: Optimized to minimize conduction losses Includes SyncFET Schottky diode RDS(on) max= 20 mΩ @ VGS = 10V RDS(on) max= 28 mΩ @ VGS = 4.5V • Q1: Optimized for low switching losses Low gate charge (8nC typical) RDS(on) max= 31 mΩ @ VGS = 10V RDS(on) |
|
|
|
|
Fairchild Semiconductor |
Dual N-Channel MOSFET • Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) = 0.016Ω @ VGS = 10V RDS(on) = 0.021Ω @ VGS = 4.5V • Q1: Optimized for low switching losses Low Gate Charge ( 8.5 nC typical) RDS(on) = 0.028Ω @ VGS = 10V RDS( |
|
|
|
|
Fairchild Semiconductor |
Dual Notebook Power Supply N-Channel PowerTrench SyncFET • Q2: Optimized to minimize conduction losses Includes SyncFET Schottky diode RDS(on) = 0.019Ω @ VGS = 10V RDS(on) = 0.027Ω @ VGS = 4.5V • Q1: Optimized for low switching losses Low gate charge ( 5 nC typical) RDS(on) = 0.040Ω @ VGS = 10V RDS(on) = 0 |
|
|
|
|
Fairchild Semiconductor |
Dual Notebook Power Supply N-Channel PowerTrench SyncFET • Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) = 20 mΩ @ VGS = 10V RDS(on) = 28 mΩ @ VGS = 4.5V • Q1: Optimized for low switching losses Low gate charge (6.5 nC typical) RDS(on) = 29 mΩ @ VGS = 10V RDS(on) |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • Q2: 15 A, 30V. RDS(on) = 7.5 mΩ @ VGS = 10V RDS(on) = 9 mΩ @ VGS = 4.5V • Q1: 12A, 30V. RDS(on) = 12 mΩ @ VGS = 10V RDS(on) = 16 mΩ @ VGS = 4.5V 1 2 3 4 8 14 13 Q1 12 11 10 SO-14 Vin G1 G2 S2 S2 S2 5 6 7 Q2 9 8 Absolute Maximum Ratings |
|
|
|
|
Fairchild Semiconductor |
Dual Notebook Power Supply N-Channel PowerTrench SyncFET • Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) max= 13.5mΩ @ VGS = 10V RDS(on) max= 16.5mΩ @ VGS = 4.5V • • Low gate charge (21nC typical) Q1: Optimized for low switching losses RDS(on) max= 28.0mΩ @ VGS = |
|
|
|
|
Fairchild Semiconductor |
Single-Stage PFC Controller OVERVIEW Innovative switching-charge multiplier divider Multi-vector control for improved PFC output transient response 1:1 Synchronous switching with SYNC Average current mode control Remote on/off control Power-on sequence con |
|
Desde 2024. D4U Semiconductor.
|