| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
FQA55N10 • • • • • • • 61A, 100V, RDS(on) = 0.026Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 130 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-3P |
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Fairchild Semiconductor |
N-Channel MOSFET • • • • • • 55A, 60V, RDS(on) = 0.022 Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transis |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 4.8 mΩ (Typ.) @ VGS = 10 V, ID = 120 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFE |
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Fairchild Semiconductor |
N-Channel MOSFET • • • • • • 55A, 60V, RDS(on) = 0.022 Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transis |
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Fairchild Semiconductor |
Single Timer • High Current Drive Capability (200mA) • Adjustable Duty Cycle • Temperature Stability of 0.005%/°C • Timing From µSec to Hours • Turn off Time Less Than 2µSec Applications • Precision Timing • Pulse Generation • Time Delay Generation • Sequential T |
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Fairchild Semiconductor |
60V N-Channel MOSFET • • • • • • • 55A, 60V, RDS(on) = 0.020Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK |
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Fairchild Semiconductor |
100V N-Channel MOSFET • • • • • • • 34.2A, 100V, RDS(on) = 0.026Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 130 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! GD S ! " " " TO- |
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Fairchild Semiconductor |
FDP55N06 • RDS(on) = 22 mΩ @VGS = 10 V, ID = 27.5 A • Low Gate Charge ( Typ. 30 nC) • Low Crss ( Typ. 60 pF) • 100% Avalanche Tested N-Channel UniFETTM MOSFET Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar |
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Fairchild Semiconductor |
100V N-Channel MOSFET • • • • • • • 61A, 100V, RDS(on) = 0.026Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 130 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-3P |
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Fairchild Semiconductor |
250V N-Channel MOSFET ,/))52 8 (&) && 6- 7 (() ±6) * ' ' ' * ; ' ; *$ = =$5 5 5 9 * 8 '! : '! +!'! : |
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Fairchild Semiconductor |
100V N-Channel MOSFET • • • • • • • 55A, 100V, RDS(on) = 0.026Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 130 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-P |
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Fairchild Semiconductor |
60V N-Channel MOSFET • • • • • • • 55A, 60V, RDS(on) = 0.020Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 |
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Fairchild Semiconductor |
100V N-Channel MOSFET • 55 A, 100 V, RDS(on) = 26 mΩ (Max.) @ VGS = 10 V, ID = 27.5 A • Low Gate Charge (Typ. 75 nC) • Low Crss (Typ. 130 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D GDS TO-220 Absolute Maximum Ratings TC = 25°C unless othe |
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Fairchild Semiconductor |
Single N-Channel PowerTrench MOSFET Max rDS(on) = 27mΩ at VGS = 10V, ID = 6.1A Max rDS(on) = 36mΩ at VGS = 4.5V, ID = 5.3A SuperSOTTM -6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick). RoHS Compliant tm ® General Description This N-Channel |
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Fairchild Semiconductor |
60V N-Channel MOSFET • • • • • • • 55A, 60V, RDS(on) = 0.020Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK |
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Fairchild Semiconductor |
100V N-Channel MOSFET • • • • • • • 55A, 100V, RDS(on) = 0.026Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 130 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-P |
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Desde 2024. D4U Semiconductor.
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