| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
N-channel FET • High Density Cell Design for Low RDS(ON) • Voltage Controlled Small Signal Switch • Rugged and Reliable • High Saturation Current Capability Description These N-channel enhancement mode field effect transistors are produced using Fairchild's propr |
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Fairchild Semiconductor |
N-channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input / Output Leakage • Ultra-Small Surface Mount Package • Pb Free / RoHS Compliant • ESD HBM = 2000 V (Typical: 3000 V) as per JESD22 A114 and ES |
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Fairchild Semiconductor |
N-Channel MOSFET • 12.4 A, 40 V RDS(ON) = 11 mΩ @ VGS = 4.5 V RDS(ON) = 9 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching • FLMP SO-8 package: Enhanced thermal performance in |
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Fairchild Semiconductor |
N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant D Drain S G SOT 523F Gate Source Ordering Information Par |
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Fairchild Semiconductor |
N-Channel Transistor • High Density Cell Design for Low RDS(ON) • Voltage Controlled Small Signal Switch • Rugged and Reliable • High Saturation Current Capability Description These N-channel enhancement mode field effect transistors are produced using Fairchild's propr |
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Fairchild Semiconductor |
N-channel FET • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant SC70-6 (SOT 363) D2 G1 S1 1 Marking : |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor ICES IEBO hFE VCE (sat) VBE (sat) fT hfe Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Small Signal Current Gain On Characteristics * VCE = 5.0V, IC = 100mA VCE = 5. |
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Fairchild Semiconductor |
NPN Small Signal General Purpose Amplifiers |
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Fairchild Semiconductor |
MOSFET • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free by Design/RoHS Compliant (Pin4) D2 G1 S1 D2 S1 G1 SO |
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Fairchild Semiconductor |
N-Channel MOSFET • 23 A, 20 V RDS(ON) = 3.5 mΩ @ VGS = 4.5 V RDS(ON) = 5.0 mΩ @ VGS = 2.5 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching • FLMP SO-8 package: Enhanced thermal performance |
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Fairchild Semiconductor |
700V N-Channel MOSFET • • • • • • 2.0A, 700V, RDS(on) = 6.3Ω @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! GD S ! " " " TO-220F FQPF Series ! S Absolute Maximum Ratin |
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Fairchild Semiconductor |
N-Channel MOSFET ! Lower RDS(on) ! Improved Inductive Ruggedness ! Fast Switching Times ! Lower Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability 2N7002MTF BVDSS = 60 V RDS(on) = 5.0 Ω ID = 200 mA SOT-23 Product Summary Part N |
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Fairchild Semiconductor |
Advanced Small Signal MOSFET • Fast Switching Times • Improved Inductive Ruggedness • Lower Input Capacitance • Extended Safe Operating Area • Improved High-Temperature Reliability Description These N-channel enhancement mode field effect transistors are produced using Fairchil |
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Fairchild Semiconductor |
NPN Darlington Transistor TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N7052 625 5.0 83.3 200 Max 2N7053 1,000 8.0 125 50 *NZT7053 1,000 8.0 125 Unit |
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Fairchild Semiconductor |
NPN Darlington Transistor TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N7052 625 5.0 83.3 200 Max 2N7053 1,000 8.0 125 50 *NZT7053 1,000 8.0 125 Unit |
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Fairchild Semiconductor |
N-Channel Enhancement Mode Field Effect Transistor • High Density Cell Design for Low RDS(ON) • Voltage Controlled Small Signal Switch • Rugged and Reliable • High Saturation Current Capability • Very Low Capacitance • Fast Switching Speed Description This N-channel enhancement mode field effect tra |
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Fairchild Semiconductor |
MOSFET • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free by Design/RoHS Compliant (Pin4) D2 G1 S1 D2 S1 G1 SO |
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Fairchild Semiconductor |
N-channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant D G SOT - 323 Marking : 2N S Absolute Maximum Ratings * Ta = |
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Fairchild Semiconductor |
N-channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Pb Free/RoHS Compliant • ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 |
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Fairchild Semiconductor |
Advanced Small Signal MOSFET • Fast Switching Times • Improved Inductive Ruggedness • Lower Input Capacitance • Extended Safe Operating Area • Improved High-Temperature Reliability Description These N-channel enhancement mode field effect transistors are produced using Fairchil |
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Desde 2024. D4U Semiconductor.
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