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Fairchild Semiconductor |
Small Signal Diode 4AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) |
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Fairchild Semiconductor |
General Purpose Rectifiers • • Low forward voltage drop. High surge current capability. DO-41 COLOR BAND DENOTES CATHODE General Purpose Rectifiers Absolute Maximum Ratings* Symbol VRRM IF(AV) IFSM TA = 25°C unless otherwise noted Parameter 4001 Peak Repetitive Reverse Volt |
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Fairchild Semiconductor |
General Purpose Rectifiers • Low Forward Voltage Drop • High Surge Current Capability Ordering Information Part Number 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Top Mark 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 DO-41 COLOR BAND DENOTES CATHODE Package DO-204 |
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Fairchild Semiconductor |
General Purpose Rectifiers • Low Forward Voltage Drop • High Surge Current Capability Ordering Information Part Number 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Top Mark 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 DO-41 COLOR BAND DENOTES CATHODE Package DO-204 |
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Fairchild Semiconductor |
High Conductance Ultra Fast Diode ic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max 1N4454 500 3.33 300 Units mW mW/ °C °C/W ©1997 Fairchild Semiconductor Corporation 1N4454 High Conductance Ultra Fast Diode (continued) Electrical Charact |
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Fairchild Semiconductor |
400V N-Channel MOSFET /,%))72 8 ()) %% & 16 (1 ±:) * ' ' ' * < ' < *5 ? ?57 7 7 9 * 8 '! ; '! + |
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Fairchild Semiconductor |
Zeners 5.88 10 4 1N4691 5.89 6.2 6.51 10 5 1N4692 6.45 6.8 7.14 10 5.1 1N4693 7.125 7.5 7.785 10 5.7 1N4694 7.79 8.2 8.61 1 6.2 1N4695 8.265 8.7 9.135 1 6.6 1N4696 8.645 9.1 9.555 1 6.9 1N4697 9.5 10 10.5 1 7.6 1 |
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Fairchild Semiconductor |
Zeners 5.88 10 4 1N4691 5.89 6.2 6.51 10 5 1N4692 6.45 6.8 7.14 10 5.1 1N4693 7.125 7.5 7.785 10 5.7 1N4694 7.79 8.2 8.61 1 6.2 1N4695 8.265 8.7 9.135 1 6.6 1N4696 8.645 9.1 9.555 1 6.9 1N4697 9.5 10 10.5 1 7.6 1 |
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Fairchild Semiconductor |
Zeners 5.88 10 4 1N4691 5.89 6.2 6.51 10 5 1N4692 6.45 6.8 7.14 10 5.1 1N4693 7.125 7.5 7.785 10 5.7 1N4694 7.79 8.2 8.61 1 6.2 1N4695 8.265 8.7 9.135 1 6.6 1N4696 8.645 9.1 9.555 1 6.9 1N4697 9.5 10 10.5 1 7.6 1 |
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Fairchild Semiconductor |
Small Signal Diode ymbol VR VF IR CT Parameter Breakdown Voltage Forward Voltage 1N459A Reverse Leakage Total Capacitance IR = 100µA IF = 3mA IF = 100mA Conditions Min. 200 Max 1.0 1.0 25 5 6.0 Units V V V nA µA pF 1N459 VR = 175V 1N459A VR = 175V, TA = 150°C 1N4 |
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Fairchild Semiconductor |
Zener Diodes .5 7.875 49 45 41 37 34 7 550 1 5 600 1 2 700 1 3.5 700 1 4 700 0.5 7.79 8.2 8.61 8.645 9.1 9.555 9.5 10 10.5 10.45 11 11.55 11.4 12 12.6 31 28 25 23 21 4.5 700 0.5 5 700 0.5 7 700 0.25 8 700 0.25 9 700 0.25 Leakage Current IR VR (A) (V) |
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Fairchild Semiconductor |
General Purpose Rectifiers • Low Forward Voltage Drop • High Surge Current Capability Ordering Information Part Number 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Top Mark 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 DO-41 COLOR BAND DENOTES CATHODE Package DO-204 |
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Fairchild Semiconductor |
Small Signal Diode ymbol VR VF IR CT Parameter Breakdown Voltage Forward Voltage 1N459A Reverse Leakage Total Capacitance IR = 100µA IF = 3mA IF = 100mA Conditions Min. 200 Max 1.0 1.0 25 5 6.0 Units V V V nA µA pF 1N459 VR = 175V 1N459A VR = 175V, TA = 150°C 1N4 |
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Fairchild Semiconductor |
HGT1N40N60A4D of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT |
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Fairchild Semiconductor |
General Purpose Rectifiers • Low forward voltage drop. • High surge current capability. • High reliability. • High current capability. DO-41 COLOR BAND DENOTES CATHODE General Purpose Rectifiers (Glass Passivated) Absolute Maximum Ratings* TA = 25°C unless otherwise noted |
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Fairchild Semiconductor |
Zeners 5.88 10 4 1N4691 5.89 6.2 6.51 10 5 1N4692 6.45 6.8 7.14 10 5.1 1N4693 7.125 7.5 7.785 10 5.7 1N4694 7.79 8.2 8.61 1 6.2 1N4695 8.265 8.7 9.135 1 6.6 1N4696 8.645 9.1 9.555 1 6.9 1N4697 9.5 10 10.5 1 7.6 1 |
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Fairchild Semiconductor |
Small Signal Diode ol Parameter Test Conditions VR Breakdown Voltage VF Forward Voltage IR Reverse Current CT Total Capacitance trr Reverse Recovery Time IR = 100 µA IF = 20 mA VR = 20 V VR = 20 V, TA = 150°C VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6 V, RL = 100 Ω, Ir |
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Fairchild Semiconductor |
N-Channel IGBT of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT |
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Fairchild Semiconductor |
Zeners 5.88 10 4 1N4691 5.89 6.2 6.51 10 5 1N4692 6.45 6.8 7.14 10 5.1 1N4693 7.125 7.5 7.785 10 5.7 1N4694 7.79 8.2 8.61 1 6.2 1N4695 8.265 8.7 9.135 1 6.6 1N4696 8.645 9.1 9.555 1 6.9 1N4697 9.5 10 10.5 1 7.6 1 |
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Fairchild Semiconductor |
Zeners 5.88 10 4 1N4691 5.89 6.2 6.51 10 5 1N4692 6.45 6.8 7.14 10 5.1 1N4693 7.125 7.5 7.785 10 5.7 1N4694 7.79 8.2 8.61 1 6.2 1N4695 8.265 8.7 9.135 1 6.6 1N4696 8.645 9.1 9.555 1 6.9 1N4697 9.5 10 10.5 1 7.6 1 |
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Desde 2024. D4U Semiconductor.
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