Fairchild Semiconductor 1N3 Hoja de datos

No.	parte #	Fabricante	Descripción
1	HGT1N30N60A4D	Fairchild Semiconductor	600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT
2	30N60A4D	Fairchild Semiconductor	HGT1N30N60A4D of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT
3	1N3064	Fairchild Semiconductor	Small Signal Diode
4	H11N3-M	Fairchild Semiconductor	6-PIN DIP HIGH SPEED LOGIC OPTOCOUPLERS • • • • • • • • • • High data rate, 5 MHz typical (NRZ) Free from latch up and oscilliation throughout voltage and temperature ranges. Microprocessor compatible drive Logic compatible output sinks 16 mA at 0.5 V maximum Guaranteed on/off threshold hy
5	1N3595	Fairchild Semiconductor	Small Signal Diode Absolute Maximum Ratings rameter Breakdown Voltage Forward Voltage Test Conditions IR = 100 µA IF = 1.0 mA IF = 5.0 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 200 mA VR = 125 V VR = 30 V, TA = 125°C VR = 125 V, TA = 125°C VR = 125 V, TA = 150°C VR = 0, f = 1.0 MHz IF = 10 mA
6	1N3070	Fairchild Semiconductor	Small Signal Diode n Voltage Forward Voltage Reverse Leakage Total Capacitance Reverse Recovery Time Test Conditions IR = 100µA IF = 100mA VR = 175V VR = 175V, TA = 150°C VR = 0V, f = 1.0MHz IF = IR = 30mA, RL = 100Ω Min. 200 Max. 1.0 100 100 5 50 Units V V nA µA p