| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
900V N-Channel MOSFET • • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss ( typical 23pF) Fast switching 100% avalanche tested Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The |
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Fairchild Semiconductor |
400V N-Channel MOSFET /,%))72 8 ()) %% & 16 (1 ±:) * ' ' ' * < ' < *5 ? ?57 7 7 9 * 8 '! ; '! + |
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Fairchild Semiconductor |
N-Channel MOSFET • 650V @Tj = 150°C • Typ. Rds(on)=0.32Ω • Ultra low gate charge (typ. Qg=40nC) • Low effective output capacitance (typ. Coss.eff=95pF) • 100% avalanche tested • RoHS Compliant D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unle |
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Fairchild Semiconductor |
Single Comparator • Low input bias current : 250nA (Max) • Low input offset current : 50nA (Max) • Differential Input Voltage : ±30V • Power supply voltage : single 5.0V supply to ±15V. • Offset voltage null capability. • Strobe capability. Description The LM311 seri |
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Fairchild Semiconductor |
FQP11N50CF • 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V • Low Gate Charge (typical 43 nC) • Low Crss (typical 20pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • Fast Recovery Body Diode (typical 90ns) TM Description These N-Channel enhan |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • Fast Recovery Type ( trr = 120ns) • Ultra Low Gate Charge (typ. Qg = 40nC) • Low Effective Output Capacitance (typ. Cosseff.=95pF) • 100% avalanche tested TM Description SuperFETTM is, Farichild’s proprie |
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Fairchild Semiconductor |
6-PIN DIP HIGH SPEED LOGIC OPTOCOUPLERS • • • • • • • • • • High data rate, 5 MHz typical (NRZ) Free from latch up and oscilliation throughout voltage and temperature ranges. Microprocessor compatible drive Logic compatible output sinks 16 mA at 0.5 V maximum Guaranteed on/off threshold hy |
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Fairchild Semiconductor |
400V N-Channel MOSFET /+%((72 8 &(( %% & 10 &9 ±;( ) ' ' ' ) = ' = )5 ? ?57 7 7 : ) 8 '! < '! * |
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Fairchild Semiconductor |
SuperFET • • • • • • 650V @ Tj = 150°C Typ. Rds(on) = 0.32Ω Ultra low gate charge (typ. Qg=40nC) Low effective output capacitance (typ. Coss.eff = 95pF) 100% avalanche tested RoHS Compliant D { ● ◀ G D S TO-220AB FCP Series G{ GD S ▲ ● ● TO-220F FCPF |
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Fairchild Semiconductor |
LCD Backlight Inverter Driver High-Efficiency Single-Stage Power Conversion Wide Input Voltage Range: 5V to 25.5V Backlight Lamp Ballast and Soft Dimming Reduced Number of Required External Components Precision Voltage Reference Trimmed to 2% ZVS Full-Bridge Topology |
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Fairchild Semiconductor |
6-PIN DIP HIGH SPEED LOGIC OPTOCOUPLERS • • • • • • • • • • High data rate, 5 MHz typical (NRZ) Free from latch up and oscilliation throughout voltage and temperature ranges. Microprocessor compatible drive Logic compatible output sinks 16 mA at 0.5 V maximum Guaranteed on/off threshold hy |
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Fairchild Semiconductor |
6-PIN DIP HIGH SPEED LOGIC OPTOCOUPLERS • • • • • • • • • • High data rate, 5 MHz typical (NRZ) Free from latch up and oscilliation throughout voltage and temperature ranges. Microprocessor compatible drive Logic compatible output sinks 16 mA at 0.5 V maximum Guaranteed on/off threshold hy |
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Fairchild Semiconductor |
6-PIN DIP HIGH SPEED LOGIC OPTOCOUPLERS • • • • • • • • • • High data rate, 5 MHz typical (NRZ) Free from latch up and oscilliation throughout voltage and temperature ranges. Microprocessor compatible drive Logic compatible output sinks 16 mA at 0.5 V maximum Guaranteed on/off threshold hy |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies whe |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies whe |
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Fairchild Semiconductor |
N-Channel 2.5V Specified PowerTrench MOSFET • 1.9 A, 20 V. RDS(ON) = 0.115 Ω @ VGS = 4.5 V RDS(ON) = 0.150 Ω @ VGS = 2.5 V. • • • Low gate charge (3nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package. Applications |
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Fairchild Semiconductor |
900V N-Channel MOSFET • 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A • Low Gate Charge (Typ. 72 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested • RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Se |
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Fairchild Semiconductor |
400V N-Channel MOSFET /+-((72 9 '(( %% 68 :6 ±:( ) & & & ) = & = )5 @ @57 7 7 ; ) 9 &! < &! * |
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Fairchild Semiconductor |
900V N-Channel MOSFET • • • • • • 7.2A, 900V, RDS(on) = 0.96 Ω @ VGS = 10 V Low gate charge ( typical 72 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G D S ! " " " TO-3PF FQAF Series ! S Absolute Maximum Rati |
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Desde 2024. D4U Semiconductor.
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