Fairchild MMB Hoja de datos

No.	parte #	Fabricante	Descripción
1	MMBT4403	Fairchild	PNP General Purpose Amplifier nded. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value
2	MMBD4148CC	Fairchild Semiconductor	Small Signal Diode
3	MMBFJ201	Fairchild	N-Channel General Purpose Amplifier
4	MMBD4148	Fairchild Semiconductor	Small Signal Diode
5	MMBZ5249B	Fairchild Semiconductor	Zener Diodes
6	MMBD1401A	Fairchild	High Voltage General Purpose Diode
7	MMBD1403A	Fairchild	High Voltage General Purpose Diode
8	MMBD1505	Fairchild	Small Signal Diode cycle operations Thermal Characteristics Units V mA A A °C °C Symbol PD RθJA Parameter Power Dissipation Thermal Resistance, Junction to Ambient Value 350 357 Units mW °C/W Electrical Characteristics TA = 25°C unless otherwise noted Symbol VR
9	MMBD1705	Fairchild	High Conductance Low Leakage Diode eady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Ther
10	MMBF170	Fairchild	N-Channel Enhancement Mode Field Effect Transistor ■ High density cell design for low RDS(ON). ■ Voltage controlled small signal switch. ■ Rugged and reliable. ■ High saturation current capability. BS170 MMBF170 D D GS TO-92 S SOT-23 G Absolute Maximum Ratings TA = 25°C unless otherwise noted
11	MMBT2907	Fairchild	PNP General Purpose Amplifier
12	MMBT2907A	Fairchild	PNP General Purpose Amplifier ory should be consulted on applications involving pulsed or low duty cycle operations. ã 1997 Fairchild Semiconductor Corporation PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A PNP General Purpose Amplifier (continued) Electrical Characteris
13	MMBT4400	Fairchild	NPN General Purpose Amplifier 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4400 625 5.0 83.3 200 Max *MMBT4400 350 2.8 357 Units mW mW/ °C °C/W °C/W © 1997
14	MMBZ5V6B	Fairchild Semiconductor	24 Watt Peak Power Zener Transient Voltage Suppressor • • • • • • SOT-23 Zener for ESD Protection Pb-free Maximum Clamping voltage = 8V @ Peak Pulse Current= 3A Working Peak Reverse Voltage = 3V HBM = 16KV (Class 3) ESD Rating Flammability Rating UL94 V-O Connection Diagram 3.Anode 3 3 2. N/C 1.Cathod
15	MMBZ5236B	Fairchild Semiconductor	Zener Diodes
16	MMBZ5245B	Fairchild Semiconductor	Zener Diodes
17	MMBD4148SE	Fairchild Semiconductor	Small Signal Diode
18	MMBF5103	Fairchild Semiconductor	N-Channel Switch = 1.0µA, VDS = 0 VGS = -15V, VDS = 0 VGS = -15V, VDS = 0, Ta = 125°C VDS = 20V, ID = 1.0nA IG = 1.0mA, VDS = 0 VDS = 15V, VGS = 0 VDS = 15V, VGS = 0, f = 1.0MHz VGS = -15V, f = 1.0MHz 10 -1.2 Min. -40 -200 -500 -2.7 1.0 40 16 6.0 Max. Units V pA nA V
19	MMBZ5223B	Fairchild Semiconductor	Zener Diodes
20	MMBD1405	Fairchild	Small Signal Diodes