| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Fairchild |
Silicon NPN Small Signal Transistor |
|
|
|
|
Fairchild |
AMPLIFIER TRANSISTOR ts V V V Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)CBO V(BR)EBO ICBO IEBO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter-Base Leakage Current 15 15 40 120 80 nA nA On |
|
|
|
|
Fairchild |
NPN General Purpose Amplifier z pF Min. 50 60 6 15 15 Typ. Max. Units V V V nA nA Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)CBO V(BR)EBO ICBO IEBO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter-Base Le |
|
|
|
|
Fairchild |
SILICON NPN SMALL SIGNAL TRANSISTOR IC = 2mA IE = 10µA VCB = 30V VEB = 3V VCE = 5V, IC = 10µA VCE = 5V, IC = 100mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA IC = 100mA, IB = 5mA VCE = 5V, IC = 2mA VCE = 10V, f = 1MHz VCE = 5V, IC = 10mA f = 100MHz VCE = 5V, IC = 2mA f = 1KHz VCE = 5V, |
|
|
|
|
Fairchild |
NPN General Purpose Amplifier in. 50 60 6 15 15 Typ. Max. Units V V V nA nA Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)CBO V(BR)EBO ICBO IEBO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter-Base Leakage |
|
|
|
|
Fairchild |
AMPLIFIER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|