FOSHAN BLUE ROCKET 3DG Hoja de datos

No.	parte #	Fabricante	Descripción
1	3DG9014M	FOSHAN BLUE ROCKET	SILICON NPN TRANSISTOR High P C and h FE, excellent hFE linearity, complementary pair with 9015M(3CG9015M). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg 50 45 5.0 100 400 150 -55～150 V V V mA mW ℃ ℃ /Electrical characteristics(
2	3DG2216	FOSHAN BLUE ROCKET	SILICON NPN TRANSISTOR High gain, good hFE linearity. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC IE PC Tj Tstg 50 45 4.0 50 -50 300 150 -55～150 V V V mA mA mW ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Rating
3	3DG2230A	FOSHAN BLUE ROCKET	(3DG2230/A) SILICON NPN TRANSISTOR High voltage, high DC current gain. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC IB PC Tj Tstg 2SC2230 2SC2230A 200 160 180 V V V mA mA mW ℃ ℃ 5.0 100 50 800 150 -55～150 /Electrical characteristics(Ta=25℃) Symbol
4	BR3DG9014W	FOSHAN BLUE ROCKET	Silicon NPN transistor PC ,hFE , 9015W(BR3CG9015W)。 High PC and hFE, excellent hFE linearity, complementary pair with 9015W(BR3CG9015W). / Applications 、。 Low frequency, low noise pre-amplifier. / Equivalent Circuit / Pinning 3 21 PIN1：Emitter PIN 2：Base PIN 3：Col
5	BR3DG9014T	FOSHAN BLUE ROCKET	Silicon NPN transistor PC ,hFE , 9015T(BR3CG9015T)。 High PC and hFE excellent hFE linearity, complementary pair with 9015T(BR3CG9015T). / Applications 、。 Low frequency, low noise amplifier. / Equivalent Circuit / Pinning 1 2 3 PIN1：Base PIN 2：Collector / Marking
6	BR3DG400L	FOSHAN BLUE ROCKET	Silicon NPN transistor ，。 High Voltage ,low. Current. / Applications 。 Low frequency power amplifier, electronic governor applications. / Equivalent Circuit / Pinning 123 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications
7	3DG2230	FOSHAN BLUE ROCKET	(3DG2230/A) SILICON NPN TRANSISTOR High voltage, high DC current gain. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC IB PC Tj Tstg 2SC2230 2SC2230A 200 160 180 V V V mA mA mW ℃ ℃ 5.0 100 50 800 150 -55～150 /Electrical characteristics(Ta=25℃) Symbol
8	3DG8050M	FOSHAN BLUE ROCKET	SILICON NPN TRANSISTOR Complementary pair with S8550M(3CG8550M). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 40 V VCEO 25 V VEBO 6.0 V IC 800 mA IB 200 mA PC 450 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol T