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FGX |
NPN EPITAXIAL SILICON TRANSISTOR cE(sat) IC= 1.5A,IB=0.03A V Current Gain -Bandwidth product fT VCE = 2V,Ic= 500mA MHZ Output Capacitance COB VCB= 10V,IE= 0,f=1MHZ pF Hfe CLASSIFICAT ION Classification O HFE 100~200 Y 160~320 |
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Desde 2024. D4U Semiconductor.
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