Excelliance MOS EMB Hoja de datos

No.	parte #	Fabricante	Descripción
1	EMB02N03HR	Excelliance MOS	MOSFET when mounted on a 1 in2 pad of 2 oz copper. UNIT V A mJ W °C UNIT °C / W 2014/8/1 p.1 EMB02N03HR ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source
2	EMB12N03V	Excelliance MOS	MOSFET W °C MAXIMUM 6 50 UNIT °C / W p.1 EMB12N03V ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body
3	EMB20P03V	Excelliance MOS	MOSFET CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Curren
4	EMBA5N10A	Excelliance MOS	N-Channel Logic Level Enhancement Mode Field Effect Transistor / W p.1 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMBA5N10A LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero
5	EMB09A3HP	Excelliance MOS	MOSFET m junction temperature. 2Duty cycle  1％ RJA when mounted on a 1 in2 pad of 2 oz copper. TYPICAL MAXIMUM 2.6 1.8 62 60 27 25 UNIT °C / W 2013/11/21 p.1 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TE
6	EMB04N03H	Excelliance MOS	MOSFET ad of 2 oz copper. UNIT V A mJ W °C UNIT °C / W 2012/2/27 p.1 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMB04N03H LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Th
7	EMB09A03HP	Excelliance MOS	N-Channel Logic Level Enhancement Mode Field Effect Transistor 22.5 22.5 48 69 19 27 -55 to 150 UNIT V A mJ W °C MAXIMUM 2.6 1.8 62 55 27 25 UNIT °C / W 2019/8/27 p.1 EMB09A03HP ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MI
8	EMB09K03HP	Excelliance MOS	N-Channel Logic Level Enhancement Mode Field Effect Transistor um junction temperature. 2Duty cycle  1％ RJA when mounted on a 1 in2 pad of 2 oz copper. TYPICAL MAXIMUM 2.6 1.8 62 60 27 25 UNIT °C / W 2013/11/21 p.1 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL T
9	EMB03N03V	Excelliance MOS	N-Channel Logic Level Enhancement Mode Field Effect Transistor 1 -55 to 150 UNIT V A mJ W W °C MAXIMUM 6 50 UNIT °C / W p.1 EMB03N03V ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate
10	EMB06N03HR	Excelliance MOS	N-Channel Logic Level Enhancement Mode Field Effect Transistor ARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1
11	EMB14P03G	Excelliance MOS	P-Channel Logic Level Enhancement Mode Field Effect Transistor /06 p.1 EMB14P03G PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistanc
12	EMB04N03A	Excelliance MOS	N-Channel Logic Level Enhancement Mode Field Effect Transistor ad of 2 oz copper. UNIT V A mJ W °C UNIT °C / W 2012/2/27 p.1 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMB04N03A LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Th
13	EMBA2N10A	Excelliance MOS	N-Channel Logic Level Enhancement Mode Field Effect Transistor 2.5 75 UNIT °C / W 2019/10/2 p.1 EMBA2N10AS ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Le
14	EMB17A03V	Excelliance MOS	Dual N-Channel MOSFET ed by maximum junction temperature. 2Duty cycle  1％ 355°C / W when mounted on a 1 in2 pad of 2 oz copper. 7.5 °C / W 55 2012/8/15 p.1 ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST
15	EMB07P03V	Excelliance MOS	P-Channel Logic Level Enhancement Mode Field Effect Transistor 6 50 UNIT °C / W p.1 350°C / W when mounted on a 1 in2 pad of 2 oz copper. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMB07P03V LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown
16	EMBA5N10G	Excelliance MOS	MOSFET
17	EMB06N06H	Excelliance MOS	N-Channel Logic Level Enhancement Mode Field Effect Transistor ckage limited. UNIT V A mJ W °C UNIT °C / W 2016/4/15 p.1 EMB06N06H ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX Drain‐Source Breakdown Voltage Gate Threshold Volt
18	EMB20D03H	Excelliance MOS	MOSFET
19	EMB12N03G	Excelliance MOS	N-Channel Logic Level Enhancement Mode Field Effect Transistor on a 1 in2 pad of 2 oz copper. UNIT V A mJ W °C UNIT °C / W 2018/8/22 p.1 EMB12N03G ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Vo
20	EMB32C03G	Excelliance MOS	MOSFET S LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS I