| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Eudyna Devices |
Ku Band Power GaAs FET • • • • • High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general purpose applicatio |
|
|
|
|
Eudyna Devices |
GaAs FET & HEMT Chips • • • • High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Source Gate Drain DESCRIPTION The FLK027XP, and FLK027XV chip is a power GaAs FET that is designed for general purpose appli |
|
|
|
|
Eudyna Devices |
Ku Band Power GaAs FET •www.DataSheet4U.com High Output Power: P1dB = 32.5dBm(Typ.) • High Gain: G1dB = 6.0dB(Typ.) • High PAE: ηadd = 27%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLK207MH-14 is a power GaAs FET that is designed for gene |
|
|
|
|
Eudyna Devices |
GaAs FET & HEMT Chips •www.DataSheet4U.com High Output Power: P1dB = 32.5dBm(Typ.) • High Gain: G1dB = 6.0dB(Typ.) • High PAE: ηadd = 27%(Typ.) • Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK207XV chip is a power GaAs FET that is designed for general |
|
|
|
|
Eudyna Devices |
GaAs FET & HEMT Chips • • • • High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Source Gate Drain DESCRIPTION The FLK017XP chip is a power GaAs FET that is designed for general purpose applications in the |
|
|
|
|
Eudyna Devices |
Ku Band Power GaAs FET • • • • • High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general purpose applicatio |
|
|
|
|
Eudyna Devices |
GaAs FET & HEMT Chips • • • • High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Source Gate Drain DESCRIPTION The FLK027XP, and FLK027XV chip is a power GaAs FET that is designed for general purpose appli |
|
|
|
|
Eudyna Devices |
Ku Band Power GaAs FET • • • • • High Output Power: P1dB = 27.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK057WG is a power GaAs FET that is designed for general purpose applicatio |
|
|
|
|
Eudyna Devices |
GaAs FET & HEMT Chips • • • • High Output Power: P1dB = 27.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Source Drain Drain DESCRIPTION The FLK057XV chip is a power GaAs FET that is designed for general purpose applications in t |
|
|
|
|
Eudyna Devices |
X / Ku Band Power GaAs FET • High Output Power: P1dB = 30.0dBm(Typ.) • High Gain: G1dB = 6.5dB(Typ.) • High PAE: ηadd = 31%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package FLK107MH-14 X, Ku Band Power GaAs FET DESCRIPTION The FLK102MH-14 is a power GaAs FET that |
|
Desde 2024. D4U Semiconductor.
|