| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Eudyna Devices |
High Voltage - High Power GaN-HEMT Power Amplifier Module ・High Voltage Operation : VDS=50V ・High Gain: 28.5dB(typ.) at Pout=22dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・Proven Reliability ・Small and Low Cost Metal Base Package EMC21L1004GN High Voltage - High Power GaN-HEMT Power Amplifier Modul |
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Desde 2024. D4U Semiconductor.
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