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Dual MOSFET • N-Channel 30V/5A, RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=60mΩ(typ.) @ VGS=4.5V Pin Description S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 • P-Channel -30V/-3.5A, RDS(ON)=85mΩ(typ.) @ VGS=-10V RDS(ON)=135mΩ(typ.) @ VGS=-4.5V SO-8 • • • Super High D |
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N-Channel MOSFET • • • • 30V/30A, RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=5V Super High Dense Cell Design Pin Description 1 2 3 1 2 3 High Power and Current Handling Capability TO-252.TO-220 and SOT-223 Packages G D S G D S Top View of TO-25 |
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N-Channel MOSFET • • • • 30V/8A , RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package Pin Description SO-8 S S S G 1 2 3 4 8 7 6 5 D D D D Top View Applications • Po |
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Desde 2024. D4U Semiconductor.
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