| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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EPSON Electronics |
SG615 rrent Output rise time C-MOS level TTL level C-MOS level Output fall time TTL level Oscillation start up time Aging Shock resistance Note: TTL load: 2.4 V→0.4 V Time at 4.5 V to be 0 s Ta= +25 °C, VDD = 5 V, first year 4 ms Max. 10 ms Max. ±5 x 10 |
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EPSON Electronics |
SOJ High Frequency Crystal Oscillator sable current Output rise time C-MOS level TTL level C-MOS level Output fall time TTL level Oscillation start up time Aging Shock resistance Note: • Unless otherwise stated, characteristics (specifications) shown in the above table are based on the |
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EPSON Electronics |
SG615 |
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EPSON Electronics |
High Frequency Crystal Oscillator |
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EPSON Electronics |
(SG-615/531/51) SOJ High Frequency Crystal Oscillator |
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EPSON Electronics |
SOJ High Frequency Crystal Oscillator sable current Output rise time C-MOS level TTL level C-MOS level Output fall time TTL level Oscillation start up time Aging Shock resistance Note: • Unless otherwise stated, characteristics (specifications) shown in the above table are based on the |
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EPSON Electronics |
SOJ High Frequency Crystal Oscillator sable current Output rise time C-MOS level TTL level C-MOS level Output fall time TTL level Oscillation start up time Aging Shock resistance Note: • Unless otherwise stated, characteristics (specifications) shown in the above table are based on the |
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EPSON Electronics |
(SG-xxx) Crystal Oscillator |
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Epson Electronics |
CRYSTAL OSCILLATOR |
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EPSON Electronics |
SOJ High Frequency Crystal Oscillator sable current Output rise time C-MOS level TTL level C-MOS level Output fall time TTL level Oscillation start up time Aging Shock resistance Note: • Unless otherwise stated, characteristics (specifications) shown in the above table are based on the |
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EPSON Electronics |
SOJ High Frequency Crystal Oscillator sable current Output rise time C-MOS level TTL level C-MOS level Output fall time TTL level Oscillation start up time Aging Shock resistance Note: • Unless otherwise stated, characteristics (specifications) shown in the above table are based on the |
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EPSON Electronics |
SOJ High Frequency Crystal Oscillator sable current Output rise time C-MOS level TTL level C-MOS level Output fall time TTL level Oscillation start up time Aging Shock resistance Note: • Unless otherwise stated, characteristics (specifications) shown in the above table are based on the |
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Epson Electronics |
High Frequency Crystal Oscillator OS load: 1/2 VDD level TTL load: 1.4 V level IOH=-16 mA(PTK,PHK),-2 mA(ECK) IOL= 16 mA(PTK,PHK), 2 mA(ECK) Soldering condition Frequency stability Current consumption Output disable current Standby current Duty High output voltage Low output voltage |
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Epson Electronics |
CRYSTAL OSCILLATOR to +125 °C (SG-8002CE) -20 C to +70 °C / -40 C to +85 °C B: 50 10-6, C: 100 10-6 -20 C to +70 C M: 100 10-6 M: 100 10-6 -40 C to +85 C (except SG-8002JC) *3 40 mA Max. (SG-8002CE) 45 mA Max. 28 mA Max. No load condition, Max |
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EPSON Electronics |
SG615 |
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EPSON Electronics |
SOJ High Frequency Crystal Oscillator e C-MOS level TTL level C-MOS level Output fall time TTL level Oscillation start up time Aging Shock resistance Note: TTL load: 2.4 V→0.4 V Time at 4.5 V to be 0 s Ta= +25 °C, VDD = 5 V, first year 4 ms Max. 10 ms Max. ±5 x 10-6/year Max. ±20 x 10 |
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Epson Electronics |
CRYSTAL OSCILLATOR to +125 °C (SG-8002CE) -20 C to +70 °C / -40 C to +85 °C B: 50 10-6, C: 100 10-6 -20 C to +70 C M: 100 10-6 M: 100 10-6 -40 C to +85 C (except SG-8002JC) *3 40 mA Max. (SG-8002CE) 45 mA Max. 28 mA Max. No load condition, Max |
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Epson Electronics |
CRYSTAL OSCILLATOR to +125 °C (SG-8002CE) -20 C to +70 °C / -40 C to +85 °C B: 50 10-6, C: 100 10-6 -20 C to +70 C M: 100 10-6 M: 100 10-6 -40 C to +85 C (except SG-8002JC) *3 40 mA Max. (SG-8002CE) 45 mA Max. 28 mA Max. No load condition, Max |
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EPSON Electronics |
SOJ High Frequency Crystal Oscillator sable current Output rise time C-MOS level TTL level C-MOS level Output fall time TTL level Oscillation start up time Aging Shock resistance Note: • Unless otherwise stated, characteristics (specifications) shown in the above table are based on the |
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EPSON Electronics |
SOJ High Frequency Crystal Oscillator sable current Output rise time C-MOS level TTL level C-MOS level Output fall time TTL level Oscillation start up time Aging Shock resistance Note: • Unless otherwise stated, characteristics (specifications) shown in the above table are based on the |
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Desde 2024. D4U Semiconductor.
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