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Epson Company |
2.5V operation LVDS SAW Oscillator • Generates high frequency clock from a high stability SAW (surface acoustic wave) resonator. • 2.5V-LVDS output. • Very low jitter/low phase noise. • Small SMD in 7x5mm, Max1.4mm height, ceramic package. ♦ Applications • Gigabit Ethernet, Fibre chan |
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EPSON |
Switching Regulator |
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EPSON |
Switching Regulator |
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EPSON |
Switching Regulator |
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EPSON |
Switching Regulator |
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EPSON |
Switching Regulator |
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EPSON |
Switching Regulator |
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EPSON |
Switching Regulator |
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EPSON |
Switching Regulator |
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EPSON Electronics |
CMOS 80-Segment LCD Driver |
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EPSON Electronics |
CMOS LCD Segment Driver |
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Epson Corp |
Switching Regulator |
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EPSON |
Switching Regulator |
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EPSON |
Switching Regulator |
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Epson |
Segment-Type LCD Driver ........................................................................................................................................................... 1-1 BLOCK DIAGRAM ............................................................................ |
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EPSON |
(SLA9000F Series) High Speed / High Integration Gate Array q Super-high density (adopting 1.0µm silicon gate CMOS with 2-metal layer) q High-speed operation (operation delay of internal gate = 0.3ns at 5.0V, 2-input Power NAND standard) q Simplified level shifter cells available q Output drivability (IOL = 1 |
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EPSON |
(SLA9000F Series) High Speed / High Integration Gate Array q Super-high density (adopting 1.0µm silicon gate CMOS with 2-metal layer) q High-speed operation (operation delay of internal gate = 0.3ns at 5.0V, 2-input Power NAND standard) q Simplified level shifter cells available q Output drivability (IOL = 1 |
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EPSON |
(SLA9000F Series) High Speed / High Integration Gate Array q Super-high density (adopting 1.0µm silicon gate CMOS with 2-metal layer) q High-speed operation (operation delay of internal gate = 0.3ns at 5.0V, 2-input Power NAND standard) q Simplified level shifter cells available q Output drivability (IOL = 1 |
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EPSON |
(SLA9000F Series) High Speed / High Integration Gate Array q Super-high density (adopting 1.0µm silicon gate CMOS with 2-metal layer) q High-speed operation (operation delay of internal gate = 0.3ns at 5.0V, 2-input Power NAND standard) q Simplified level shifter cells available q Output drivability (IOL = 1 |
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EPSON |
(SLA9000F Series) High Speed / High Integration Gate Array q Super-high density (adopting 1.0µm silicon gate CMOS with 2-metal layer) q High-speed operation (operation delay of internal gate = 0.3ns at 5.0V, 2-input Power NAND standard) q Simplified level shifter cells available q Output drivability (IOL = 1 |
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Desde 2024. D4U Semiconductor.
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