| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
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Elite Semiconductor |
3.3V 1 Gbit SPI-NAND Flash Memory z Voltage Supply: 3.3V (2.7V~3.6V) z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte z Page Read Operation - Page Siz |
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Elite Semiconductor |
3.3V 512 Mbit SPI-NAND Flash Memory z Voltage Supply: 3.3V (2.7V~3.6V) z Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte z Page Read Operation - Page Size |
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Desde 2024. D4U Semiconductor.
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