Elite 130 Hoja de datos

No.	parte #	Fabricante	Descripción
1	13001	Elite	NPN Epitaxial Silicon Transistor Collector-Emitter Voltage: VCEO= 400V Collector Dissipation: PC(max)= 1000mW TO-126 Absolute Maximum Ratings (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junc
2	13003	Elite Enterprises	NPN Epitaxial Silicon Transistor IE=1mA, IC=0 VCB=700V, IE=0 VCE=400V, IB=0 VEB=9V, IC=0 VCE=2V, IC=0.5A VCE=10V, IC=0.5mA IC=1A IB=250mA IC=1A, IB=250mA IE=2A VCE=10V, IC=100mA f=1MHz IC=1A, IB1=-1B2=0.2mA, Vcc= 100V 5 0.5 2.5 MHz µS µS 8 5 1 1.2 3 V V V Min 700 400 9 1 500 1 40 M
3	13007	Elite	NPN Epitaxial Silicon Transistor C=2A VCE=5V, IC=5A IC=2A, IB=0.4A IC=5A, IB=1A IC=8A, IB=2A IC=2A, IB=0.4A IC=5A, IB=1A VCB=10V, f=0.1MHz VCE=10V, IC=0.5A VCC=125V, IC=5A 1B1=-1B2=1A RL=50 Min Typ Max Unit 400 V 1 mA 8 60 5 30 1V 2V 3V 1.2 V 1.6 V 110 pF 4 MHz 1.6 µS 3 µS 0.7 µS
4	EMP8130	Elite Semiconductor	300mA CMOS Linear Regulator ultra-high power supply rejection ratio, low output voltage noise, low dropout voltage, low quiescent current and fast transient response. It guarantees delivery of 300mA output current and supports preset output voltages ranging from 0.8V to 4.0V wi
5	AX3130	AXElite	PWM Control 2A Step-Down Converter as low current consumption. Since this converter can accommodate an input voltage up to 23V, it is also suitable for the operation via an AC adapter. VÛm w`R •yÑb€  FEATURES Input voltage 4.5V to 23V Output voltage VFB to VCC Duty ratio 0% to 100%