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ETL |
(MSD601-RT1/-ST1) NPN General Purpose Amplifier Transistors Surface Mount rrent Gain (1) (V CE = 10 Vdc, I C = 2.0 mAdc) MSD601-RT1 MSD601-ST1 (V CE = 2.0 Vdc, I C = 100 mAdc) Collector-Emitter Saturation Voltage (I C = 100 mAdc, I B = 10 mAdc) 1. Pulse Test: Pulse Width < 300 µs, D.C. < 2%. Max — — — 0.1 100 340 460 — 0.5 |
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ETL |
(MSD601-RT1/-ST1) NPN General Purpose Amplifier Transistors Surface Mount rrent Gain (1) (V CE = 10 Vdc, I C = 2.0 mAdc) MSD601-RT1 MSD601-ST1 (V CE = 2.0 Vdc, I C = 100 mAdc) Collector-Emitter Saturation Voltage (I C = 100 mAdc, I B = 10 mAdc) 1. Pulse Test: Pulse Width < 300 µs, D.C. < 2%. Max — — — 0.1 100 340 460 — 0.5 |
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ETL |
NPN General Purpose Amplifier Transistor Surface Mount , I C = 150 mAdc) (V CE = 10 Vdc, I C = 500 mAdc) Collector-Emitter Saturation Voltage (I C = 300 mAdc, I B = 30 mAdc) Output Capacitance(VCB=10Vdc,IE=0,f=1.0MHz) 1. Pulse Test: Pulse Width < 300 µs, D.C < 2%. Vdc pF DEVICE MARKING Marking Symbol |
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Desde 2024. D4U Semiconductor.
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