| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ETL |
Silicon Hot-Carrier Diodes |
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ETL |
High-Speed Switching Diode |
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ETL |
Switching Diode |
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ETL |
Schottky Barrier Diode oted) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Diode Capacitance (V R = 20 Volts, f = 1.0 MHz) Reverse Leakage (V R = 35 V) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mA) Symbol V (BR)R CT IR Min 70 — — Typ — 0.5 9.0 Max — 1.0 200 Unit |
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Desde 2024. D4U Semiconductor.
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