ETCTI LF4 Hoja de datos

No.	parte #	Fabricante	Descripción
1	LF444	ETCTI	LF444 Quad Low Power JFET Input Operational Amplifier (Rev. D)
2	LF412-N	ETCTI	LF412-N Low Offset Low Drift Dual JFET Input Operational Amplifier (Rev. F)
3	LF412QML	ETCTI	LF412QML Low Offset Low Drift Dual JFET Input Operational Amplifier (Rev. A)
4	LF444-DIE	ETCTI	Quad Low Power JFET Input Operational Amplifier
5	LF444QML	ETCTI	LF444QML Quad Low Power JFET Input Operational Amplifier
6	LF411QML-SP	Texas Instruments	Low Drift JFET Input Operational Amplifier 1 •23 Available with Radiation Specification – ELDRS FREE 100 krad(Si) • Internally Trimmed Offset Voltage: 0.5 mV(Typ) • Input Offset Voltage Drift: 10 μV/°C • Low Input Bias Current: 50 pA • Low Input Noise Current: 0.01 pA/√Hz • Wide Gain Bandwidt
7	LF411	Texas Instruments	JFET-INPUT OPERATIONAL AMPLIFIER F411C is characterized for operation from 0°C to 70°C. The LF411I is characterized for operation from –40°C to 85°C. symbol IN – IN + BAL1 BAL2 2 3 1 5 – + 6 OUT AVAILABLE OPTIONS PACKAGE TA VIOmax AT 25°C SMALL OUTLINE PLASTIC DIP (D) (P)
8	LF412	ETCTI	Dual JFET-Input Operational Amplifier (Rev. B)
9	LF412JAN	ETCTI	LF412JAN Low Offset Low Drift Dual JFET Input Operational Amplifier (Rev. A)
10	LF451	ETCTI	LF451 Wide-Bandwidth JFET-Input Operational Amplifier (Rev. A)
11	LF453	ETCTI	LF453 Wide-Bandwidth Dual JFET-Input Operational Amplifiers (Rev. A)
12	LF412C	ETCTI	Dual JFET-Input Operational Amplifier