ETC SS6 Hoja de datos

No.	parte #	Fabricante	Descripción
1	SS6616	ETC	Low Operating Current PWM 18V Step-Down DC / DC Converter Ω 2.3 A 1.5 V 0.3 V 1.8 2.0 2.2 V VUVLO1 +0.1 2.3 V 5 10 20 ms 160 ℃ 2
2	BSS69R	ETC	SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS 9 MAX. UNIT V V V nA V V V V CONDITIONS. IC=-1mA IC=-10µA IE=-10µA VCES=-30V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-100µA, IC=-1mA, IC=-10mA, VCE=-1V IC=-50mA, IC=-100mA, IC=-100µA, IC=-1mA, IC=-10mA, VCE=-1
3	HD3SS6126	ETCTI	USB 3.0 and USB 2.0 Differential Switch 2:1/1:2 MUX/DEMUX (Rev. A)
4	DSS6-0045AS	ETC	Power Schottky Rectifier • International standard package • Very low VF • Extremely low switching losses • Low IRM-values • Epoxy meets UL 94V-0 Applications • Rectifiers in switch mode power supplies (SMPS) • Free wheeling diode in low voltage converters TC = 25°C typical
5	BSS69	ETC	SOT23 PNP TRANSISTORS 9 MAX. UNIT V V V nA V V V V CONDITIONS. IC=-1mA IC=-10µA IE=-10µA VCES=-30V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-100µA, IC=-1mA, IC=-10mA, VCE=-1V IC=-50mA, IC=-100mA, IC=-100µA, IC=-1mA, IC=-10mA, VCE=-1
6	BSS65R	ETC	SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR IC=0, f=1MHz IC=-30mA IB1 = -IB2= -1.5mA VCC=-10V UNIT V V V mA mA mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). BreakdownVoltages V(BR)CEO Static Forward Current hFE Transfer Ratio Transition Frequency Collector-Base Capacitance Emitter B
7	BSS66-M6	ETC	SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS nA V V V V CONDITIONS. IC=1mA IC=10µA IE=10µA VCES=30V IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA, IC=100mA, IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA, IC=100mA, 150 Static Forw
8	BSS66R	ETC	SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS nA V V V V CONDITIONS. IC=1mA IC=10µA IE=10µA VCES=30V IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA, IC=100mA, IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA, IC=100mA, 150 Static Forw
9	BSS66R-M8	ETC	SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS nA V V V V CONDITIONS. IC=1mA IC=10µA IE=10µA VCES=30V IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA, IC=100mA, IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA, IC=100mA, 150 Static Forw
10	BSS67-M7	ETC	SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS nA V V V V CONDITIONS. IC=1mA IC=10µA IE=10µA VCES=30V IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA, IC=100mA, IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA, IC=100mA, 150 Static Forw
11	BSS67R	ETC	SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS nA V V V V CONDITIONS. IC=1mA IC=10µA IE=10µA VCES=30V IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA, IC=100mA, IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA, IC=100mA, 150 Static Forw
12	BSS67R-M9	ETC	SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS nA V V V V CONDITIONS. IC=1mA IC=10µA IE=10µA VCES=30V IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA, IC=100mA, IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA, IC=100mA, 150 Static Forw
13	BSS66	ETC	SOT23 NPN TRANSISTORS nA V V V V CONDITIONS. IC=1mA IC=10µA IE=10µA VCES=30V IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA, IC=100mA, IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA, IC=100mA, 150 Static Forw
14	BSS67	ETC	SOT23 NPN TRANSISTORS nA V V V V CONDITIONS. IC=1mA IC=10µA IE=10µA VCES=30V IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA, IC=100mA, IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA, IC=100mA, 150 Static Forw
15	BSS65	ETC	SOT23 PNP TRANSISTOR IC=0, f=1MHz IC=-30mA IB1 = -IB2= -1.5mA VCC=-10V UNIT V V V mA mA mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). BreakdownVoltages V(BR)CEO Static Forward Current hFE Transfer Ratio Transition Frequency Collector-Base Capacitance Emitter B
16	SS60012F-0102-4V-NB	ETC	SS60012F-0102-4V-NB